SCHEMBL22471971

SCHEMBL22471971

[CH2]C(C)C.[GeH4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2029 0.93
SCHEMBL4591460 0.93
SCHEMBL3684134 0.86
SCHEMBL8781203 0.86
SCHEMBL7592419 0.86
SCHEMBL23452072 0.86
SCHEMBL20636754 0.86
SCHEMBL20636756 0.86
SCHEMBL7907603 0.86
SCHEMBL1636356 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117995762-A Method for manufacturing semiconductor element with auxiliary feature 南亚科技股份有限公司 2024-05-07 CN claimed
CN-100513636-C Organometallic compounds ROMA AND HAAS ELECTRONIC MATER (US) 2009-07-15 CN claimed
CN-122080374-A Furan polyester composition and application thereof 2026-05-26 CN disclosed
CN-120040743-A Catalyst solution and preparation method thereof, polyester composition and preparation method and application thereof 东丽纤维研究所(中国)有限公司 2025-05-27 CN disclosed
CN-118782537-A Semiconductor element with filling layer and preparation method thereof 南亚科技股份有限公司 2024-10-15 CN disclosed
CN-118782538-A Method for manufacturing semiconductor element with filling layer 南亚科技股份有限公司 2024-10-15 CN disclosed
CN-118684869-A Polyester composition, and preparation method and application thereof 东丽纤维研究所(中国)有限公司 2024-09-24 CN disclosed
CN-118630043-A Semiconductor element with capping layer 南亚科技股份有限公司 2024-09-10 CN disclosed
US-12051586-B2 Method of manufacturing semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2024-07-30 US disclosed
CN-118099128-A Semiconductor element and method for manufacturing the same 南亚科技股份有限公司 2024-05-28 CN disclosed
CN-118099196-A Semiconductor element with energy removable layer 南亚科技股份有限公司 2024-05-28 CN disclosed
CN-117995752-A Semiconductor element and method for manufacturing the same 南亚科技股份有限公司 2024-05-07 CN disclosed
CN-117995762-A Method for manufacturing semiconductor element with auxiliary feature 南亚科技股份有限公司 2024-05-07 CN disclosed
WO-2022138854-A1 TEMPERATURE SENSITIVE PROBE 株式会社ダイセル 2022-06-30 WO disclosed
US-20210175073-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-06-10 US disclosed
WO-2020195998-A9 EXPLOSIVE COMPOSITION AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING HETEROATOM-DOPED NANODIAMOND 株式会社ダイセル 2020-12-03 WO disclosed
WO-2020195998-A1 EXPLOSIVE COMPOSITION AND METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING HETEROATOM-DOPED NANODIAMOND 株式会社ダイセル 2020-10-01 WO disclosed
CN-100513636-C Organometallic compounds ROMA AND HAAS ELECTRONIC MATER (US) 2009-07-15 CN disclosed