⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ethylamine SCHEMBL15233839 | 0.89 | — | — | |
| SCHEMBL2104416 | 0.75 | — | — | |
| SCHEMBL2099769 | 0.72 | — | — | |
| SCHEMBL20377936 | 0.72 | TP53 (0.31) | — | |
| SCHEMBL180627 | 0.70 | TP53 (0.36) | — | |
| SCHEMBL15309954 | 0.69 | — | — | |
| SCHEMBL2101798 | 0.69 | — | — | |
| SCHEMBL2102045 | 0.65 | — | — | |
| SCHEMBL2276680 | 0.65 | — | — | |
| SCHEMBL2269101 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113936994-A | Selective deposition of thin film dielectrics using surface termination chemistry | 应用材料公司 | 2022-01-14 | — | — | CN | claimed |
| CN-107533951-B | Selective deposition of thin film dielectrics using surface termination chemistry | 应用材料公司 | 2021-10-26 | — | — | CN | claimed |
| US-20180199432-A1 | Selective Deposition of Thin Film Dielectrics Using Surface Blocking Chemistry | APPLIED MATERIALS, INC. | 2018-07-12 | — | — | US | claimed |
| US-9911591-B2 | Selective deposition of thin film dielectrics using surface blocking chemistry | APPLIED MATERIALS, INC. (US) | 2018-03-06 | — | — | US | claimed |
| US-20160322213-A1 | Selective Deposition Of Thin Film Dielectrics Using Surface Blocking Chemistry | APPLIED MATERIALS, INC. | 2016-11-03 | — | — | US | claimed |
| US-9153597-B2 | Methods of manufacturing a three-dimensional semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-10-06 | — | — | US | claimed |
| US-20130078776-A1 | Methods of Manufacturing a Three-Dimensional Semiconductor Device | SAMSUNG ELECTRONICS CO., LTD. | 2013-03-28 | — | — | US | claimed |
| CN-119604963-A | Hybrid atomic layer deposition | 朗姆研究公司 | 2025-03-11 | — | — | CN | disclosed |
| CN-119487614-A | Deposition and etching of silicon-containing layers | 朗姆研究公司 | 2025-02-18 | — | — | CN | disclosed |
| CN-119213530-A | Low-k dielectric protection during plasma deposition of silicon nitride | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| CN-119213529-A | Seamless and crack-free deposition | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| US-20240030026-A1 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2024-01-25 | — | — | US | disclosed |
| WO-2022264430-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM | 株式会社KOKUSAI ELECTRIC | 2022-12-22 | — | — | WO | disclosed |
| US-4730074-A | Vapor phase alcoholysis of aminosilanes and carbamatosilanes | UNION CARBIDE CORPORATION (US) | 1988-03-08 | — | — | US | disclosed |
| EP-0098912-B1 | PROCESS FOR THE PREPARATION OF ALKOXYHYDRIDOSILANES | UNION CARBIDE CORPORATION (US) | 1986-04-23 | — | — | EP | disclosed |
| EP-0098911-B1 | IMPROVED PROCESS FOR THE PREPARATION OF OXIMATOHYDRIDOSILANES AND AMINOXYHYDRIDOSILANES | UNION CARBIDE CORPORATION (US) | 1986-04-16 | — | — | EP | disclosed |
| EP-0098911-A1 | Improved process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes | UNION CARBIDE CORPORATION (US) | 1984-01-25 | — | — | EP | disclosed |
| EP-0098912-A1 | Process for the preparation of alkoxyhydridosilanes | UNION CARBIDE CORPORATION (US) | 1984-01-25 | — | — | EP | disclosed |
| US-4395564-A | REACTING AN ALCOHOL WITH SILYL-AMINE | UNION CARBIDE CORPORATION (US) | 1983-07-26 | — | — | US | disclosed |
| US-4384131-A | Process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes | UNION CARBIDE CORPORATION (US) | 1983-05-17 | — | — | US | disclosed |