SCHEMBL2270771

SCHEMBL2270771

CC[SiH2]N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL27785262 0.96
SCHEMBL16582977 0.70
SCHEMBL16582992 0.70
SCHEMBL3976256 0.69
SCHEMBL10709348 0.69
SCHEMBL2272336 0.69
SCHEMBL27966736 0.65
SCHEMBL2267889 0.65
SCHEMBL2268201 0.64
SCHEMBL16582966 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 50 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111886676-B Method for treating surface of wafer and composition therefor 中央硝子株式会社 2024-09-27 CN claimed
US-11603485-B2 Surface treatment method of wafer and composition used for said method CENTRAL GLASS COMPANY, LIMITED (JP) 2023-03-14 US claimed
CN-109075021-A Improved self-assembled monolayer barrier with intermittent air-water exposure 应用材料公司 2018-12-21 CN claimed
CN-103374708-B High temperature atomic layer deposition of silicon oxide thin films 气体产品与化学公司 2017-05-17 CN claimed
CN-103374708-A High temperature atomic layer deposition of silicon oxide thin films AIR PROD & CHEM 2013-10-30 CN claimed
WO-2009058735-A1 SURFACE COATING PROCESS INTEGRATED SURFACE TECHNOLOGIES, INC. (US) 2009-05-07 WO claimed
US-6156668-A Method for forming a fine pattern in a semiconductor device HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (KR) 2000-12-05 US claimed
EP-0671483-B1 Method for vapor deposition of a ceramic coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM SPA (IT) 1997-12-29 EP claimed
EP-0671483-A1 Ceramic vapor deposited coating using a steam-containing carrier gas and non-alkoxy silane precursors ENICHEM S.p.A. (IT) 1995-09-13 EP claimed
US-5424095-A Decomposing organosilicon precursor inside chemical reactor to form film of ceramic material on surface; prevents coking ENIRICERCHE S.P.A. (IT) 1995-06-13 US claimed
CN-111886676-B Method for treating surface of wafer and composition therefor 中央硝子株式会社 2024-09-27 CN disclosed
CN-117121173-A Integration of fully aligned vias by selective deposition and resistivity reduction 朗姆研究公司 2023-11-24 CN disclosed
CN-117121172-A Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program 株式会社国际电气 2023-11-24 CN disclosed
US-11603485-B2 Surface treatment method of wafer and composition used for said method CENTRAL GLASS COMPANY, LIMITED (JP) 2023-03-14 US disclosed
CN-105801612-B Organoaminodisilane precursors and methods of thin film deposition comprising the same 弗萨姆材料美国有限责任公司 2020-11-27 CN disclosed
EP-0098912-B1 PROCESS FOR THE PREPARATION OF ALKOXYHYDRIDOSILANES UNION CARBIDE CORPORATION (US) 1986-04-23 EP disclosed
EP-0098911-A1 Improved process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
EP-0098912-A1 Process for the preparation of alkoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1984-01-25 EP disclosed
US-4395564-A REACTING AN ALCOHOL WITH SILYL-AMINE UNION CARBIDE CORPORATION (US) 1983-07-26 US disclosed
US-4384131-A Process for the preparation of oximatohydridosilanes and aminoxyhydridosilanes UNION CARBIDE CORPORATION (US) 1983-05-17 US disclosed