⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL864354 | 0.94 | TSHR (0.40) | — | |
| SCHEMBL15934461 | 0.88 | TSHR (0.44) | — | |
| SCHEMBL10964556 | 0.88 | TSHR (0.41) | — | |
| SCHEMBL863701 | 0.87 | — | — | |
| SCHEMBL24062101 | 0.85 | TSHR (0.47) | — | |
| SCHEMBL1829977 | 0.84 | TSHR (0.44) | — | |
| SCHEMBL17088163 | 0.81 | TSHR (0.50) | — | |
| SCHEMBL1826123 | 0.81 | — | — | |
| SCHEMBL17966464 | 0.81 | TSHR (0.50) | — | |
| SCHEMBL17966584 | 0.81 | TSHR (0.50) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11807758-B2 | Siloxane polymer and method of producing siloxane polymer | JNC CORPORATION (JP) | 2023-11-07 | — | — | US | disclosed |
| US-20210238419-A1 | SILOXANE POLYMER AND METHOD OF PRODUCING SILOXANE POLYMER | JNC CORPORATION (JP) | 2021-08-05 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-1405839-B1 | Process for separating zinc salts from zinc alcoholates or zinc amides containing non-aqueous synthesis solvents | CONSORTIUM ELEKTROCHEM IND (DE) | 2005-03-30 | — | — | EP | disclosed |
| EP-1405839-A1 | Process for separating zinc salts from zinc alcoholates or zinc amides containing non-aqueous synthesis solvents | Consortium für elektrochemische Industrie GmbH (DE) | 2004-04-07 | — | — | EP | disclosed |
| EP-1394140-A1 | Enantioselektive Reformatsky-Process for the preparation of optically active alcohols, amines and their derivatives | Consortium für elektrochemische Industrie GmbH (DE) | 2004-03-03 | — | — | EP | disclosed |