⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2273944 | 0.81 | — | — | |
| SCHEMBL2272126 | 0.76 | TSHR (0.32) | — | |
| SCHEMBL2102793 | 0.74 | TP53 (0.39) | — | |
| SCHEMBL2103467 | 0.72 | — | — | |
| SCHEMBL2268722 | 0.72 | — | — | |
| SCHEMBL2103391 | 0.69 | — | — | |
| SCHEMBL2268849 | 0.67 | TSHR (0.35) | — | |
| SCHEMBL11121015 | 0.67 | — | — | |
| SCHEMBL180627 | 0.67 | TP53 (0.36) | — | |
| SCHEMBL2099970 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119604963-A | Hybrid atomic layer deposition | 朗姆研究公司 | 2025-03-11 | — | — | CN | disclosed |
| CN-119487614-A | Deposition and etching of silicon-containing layers | 朗姆研究公司 | 2025-02-18 | — | — | CN | disclosed |
| CN-119213530-A | Low-k dielectric protection during plasma deposition of silicon nitride | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| CN-119213529-A | Seamless and crack-free deposition | 朗姆研究公司 | 2024-12-27 | — | — | CN | disclosed |
| US-11923191-B2 | Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium | Kokusai Electric Corporation (JP) | 2024-03-05 | — | — | US | disclosed |
| US-20240030026-A1 | PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM | Kokusai Electric Corporation (JP) | 2024-01-25 | — | — | US | disclosed |
| CN-117121172-A | Method for manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and program | 株式会社国际电气 | 2023-11-24 | — | — | CN | disclosed |
| WO-2022264430-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING DEVICE, AND PROGRAM | 株式会社KOKUSAI ELECTRIC | 2022-12-22 | — | — | WO | disclosed |
| CN-113383108-A | Deposition of carbon-doped silicon oxide | 弗萨姆材料美国有限责任公司 | 2021-09-10 | — | — | CN | disclosed |
| US-8404584-B2 | Method of manufacturing semiconductor device | FUJITSU LIMITED (JP) | 2013-03-26 | — | — | US | disclosed |
| US-20110207319-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2011-08-25 | — | — | US | disclosed |