SCHEMBL228227

SCHEMBL228227

[As-3].[As-3].[As-3].[As-3].[As-3].[As-3].[As-3].[Ga+3].[Ga+3].[Ga+3].[Ge+4].[Ge+4].[Ge+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17982598 1.00
SCHEMBL418295 0.87
SCHEMBL1143365 0.87
SCHEMBL11203222 0.82
SCHEMBL4016633 0.82
SCHEMBL10410008 0.82
SCHEMBL19346 0.82
SCHEMBL10802613 0.82
SCHEMBL142331 0.82
SCHEMBL18963056 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9231209-B2 Nanocomposite material, tunable resistor device, and method VANDERBILT UNIVERSITY (US) 2016-01-05 US claimed
US-7512170-B2 Method of forming mirrors by surface transformation of empty spaces in solid state materials MICRON TECHNOLOGY, INC. (US) 2009-03-31 US claimed
US-20070036196-A1 Method of forming mirrors by surface transformation of empty spaces in solid state materials MICRON TECHNOLOGY, INC. 2007-02-15 US claimed
WO-2007008173-A1 SEMICONDUCTOR STRUCTURE FOR TRANSISTORS WITH ENHANCED SUBTHRESHOLD SWING AND METHODS OF MANUFACTURE THEREOF NATIONAL UNIVERSITY OF SINGAPORE (SG) 2007-01-18 WO claimed
EP-0175567-B1 SEMICONDUCTOR SOLAR CELLS The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and (GB) 1991-03-06 EP claimed
JP-4246832-A None JP disclosed
US-11043335-B2 Multilayer carbon nanotube film-containing devices ALLIANCE FOR SUSTAINABLE ENERGY, LLC (US) 2021-06-22 US disclosed
WO-2021007530-A1 PHOTOVOLTAIC DEVICES FOR SWITCHABLE WINDOWS ALLIANCE FOR SUSTAINABLE ENERGY, LLC (US) 2021-01-14 WO disclosed
CN-107519627-B Intelligent basketball stand for physical training and operation method thereof 湖南大众传媒职业技术学院 2020-01-24 CN disclosed
US-20180330891-A1 MULTILAYER CARBON NANOTUBE FILM-CONTAINING DEVICES Alliance for Energy Innovation, LLC 2018-11-15 US disclosed
WO-2018209104-A1 MULTILAYER CARBON NANOTUBE FILM-CONTAINING DEVICES ALLIANCE FOR SUSTAINABLE ENERGY, LLC (US) 2018-11-15 WO disclosed
CN-207477911-U The intelligent basketball stands of athletic training 湖南大众传媒职业技术学院 2018-06-12 CN disclosed
US-20120001282-A1 RADIATION DETECTOR KONICA MINOLTA MEDICAL & GRAPHIC, INC. (JP) 2012-01-05 US disclosed
WO-2011059317-A1 SYSTEM AND METHOD FOR DETECTING INFORMATION FROM AN OBJECT CODING MODULE USING RADAR SIGNALS NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNO (NL) 2011-05-19 WO disclosed
US-7494907-B2 Nanoscale electronic devices and fabrication methods NANOCLUSTER DEVICES LIMITED (NZ) 2009-02-24 US disclosed
US-20050064618-A1 Nanoscale electronic devices &amp; frabrication methods CANTERPRISE LIMITED (NZ) 2005-03-24 US disclosed
US-6319542-B1 FORMING A THIN-FILM MICROELECTRONIC CAPACITOR ON AN INTEGRATED CIRCUIT BY FORMING AN BUFFER LAYER, A LANTHANUM DOPED BARIUM STRONTIUM TITANATE LAYER, A BARIUM STRONTIUM TITANATE DIELECTRIC LAYER AND AN UPPER ELECTRODE TEXAS INSTRUMENTS INCORPORATED 2001-11-20 US disclosed
JP-H04246832-A MANUFACTURE OF GERMANIUM GALLIUM ARSENIDE JUNCTION AND HETRO-STRUCTURE BIPOLAR TRANSISTOR NEC CORP 1992-09-02 JP disclosed
EP-0050064-B1 FIELD EFFECT TRANSISTOR HAVING A HIGH CUT-OFF FREQUENCY THOMSON-CSF (FR) 1985-05-02 EP disclosed
EP-0017531-B1 FIELD-EFFECT TRANSISTOR WITH HIGH CUT-OFF FREQUENCY AND METHOD OF MAKING IT THOMSON-CSF (FR) 1984-06-13 EP disclosed