⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL784060 | 0.87 | — | — | |
| SCHEMBL1170203 | 0.87 | — | — | |
| SCHEMBL28222294 | 0.87 | — | — | |
| SCHEMBL16243879 | 0.75 | — | — | |
| SCHEMBL5447890 | 0.75 | — | — | |
| SCHEMBL5407167 | 0.75 | — | — | |
| SCHEMBL6704082 | 0.75 | — | — | |
| SCHEMBL14891947 | 0.75 | — | — | |
| SCHEMBL5480084 | 0.75 | — | — | |
| SCHEMBL2945455 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8314465-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., INC. (KR) | 2012-11-20 | — | — | US | claimed |
| US-20110198710-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | LEE JONG-HO | 2011-08-18 | — | — | US | claimed |
| US-7902019-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-03-08 | — | — | US | claimed |
| US-20080185631-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-08-07 | — | — | US | claimed |
| US-7371633-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-05-13 | — | — | US | claimed |
| US-20050151184-A1 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-07-14 | — | — | US | claimed |
| US-8841184-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-09-23 | — | — | US | disclosed |
| US-20130084713-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | LEE JONG-HO (KR) | 2013-04-04 | — | — | US | disclosed |
| US-8314465-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., INC. (KR) | 2012-11-20 | — | — | US | disclosed |
| US-20110198710-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | LEE JONG-HO | 2011-08-18 | — | — | US | disclosed |
| US-7902019-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-03-08 | — | — | US | disclosed |
| US-20080185631-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-08-07 | — | — | US | disclosed |
| US-7371633-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-05-13 | — | — | US | disclosed |
| US-20050151184-A1 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-07-14 | — | — | US | disclosed |