⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2361164 | 0.75 | — | — | |
| SCHEMBL30940237 | 0.69 | — | — | |
| SCHEMBL4631410 | 0.66 | — | — | |
| SCHEMBL11443331 | 0.62 | CYP3A4 (0.31) | — | |
| SCHEMBL30536451 | 0.60 | — | — | |
| SCHEMBL13211642 | 0.60 | — | — | |
| SCHEMBL11064210 | 0.59 | — | — | |
| SCHEMBL3186176 | 0.59 | CYP3A4 (0.35) | — | |
| SCHEMBL8780065 | 0.57 | — | — | |
| SCHEMBL991979 | 0.57 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20110207326-A1 | SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-08-25 | — | — | US | claimed |
| CN-106867411-B | Slurry composition for chemical mechanical polishing, method for producing the same, polishing method, method for manufacturing semiconductor device, and polishing apparatus | 三星电子株式会社 | 2021-04-06 | — | — | CN | disclosed |
| US-10829690-B2 | Slurry composition for chemical mechanical polishing, method of preparing the same, and method of fabricating semiconductor device by using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-11-10 | — | — | US | disclosed |
| CN-110872472-A | Slurry composition, method of preparing the same, and method of manufacturing semiconductor device using the same | 三星电子株式会社 | 2020-03-10 | — | — | CN | disclosed |
| US-20200071613-A1 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE BY USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2020-03-05 | — | — | US | disclosed |
| US-20170107404-A1 | SLURRY COMPOSITION FOR CHEMICAL MECHANICAL POLISHING, METHOD OF PREPARING THE SAME, AND POLISHING METHOD USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-04-20 | — | — | US | disclosed |
| US-8546261-B2 | Slurry for polishing and planarization method of insulating layer using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-10-01 | — | — | US | disclosed |
| US-20110207326-A1 | SLURRY FOR POLISHING AND PLANARIZATION METHOD OF INSULATING LAYER USING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-08-25 | — | — | US | disclosed |