SCHEMBL2369854

SCHEMBL2369854

[BaH2].[Eu]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8159431 0.82
Hydrochloric Acid SCHEMBL8849318 0.82
SCHEMBL1852236 0.82
Fluoride SCHEMBL29282094 0.82
SCHEMBL8482679 0.71
SCHEMBL3386 0.71
SCHEMBL9683268 0.71
SCHEMBL9680949 0.71
Charcoal, Activated SCHEMBL7170024 0.71
SCHEMBL9681539 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113497044-B Ferroelectric tunnel junction memory device and method of manufacturing the same 台湾积体电路制造股份有限公司 2024-04-09 CN claimed
CN-111602227-B Ferroelectric memory device employing conductivity modulation of thin semiconductor material or two-dimensional charge carrier gas and method of operation thereof 桑迪士克科技有限责任公司 2023-12-19 CN claimed
CN-114730588-A Tunneling variable reluctance memory device and method of operating the same 西部数据技术公司 2022-07-08 CN claimed
CN-101163356-B Method of improving insulation performance of medium layer in electroluminescence display device GUANGDIAN ELECTRONIC CO., LTD., SHANGHAI (CN) 2011-11-30 CN claimed
CN-101163356-A Method of improving insulation performance of medium layer in electroluminescence display device SVA ELECTRON CO LTD (CN) 2008-04-16 CN claimed
CN-1808732-A Inorganic electroluminescent display and its manufacturing method SVA ELECTRON CO LTD (CN) 2006-07-26 CN claimed
CN-113497044-B Ferroelectric tunnel junction memory device and method of manufacturing the same 台湾积体电路制造股份有限公司 2024-04-09 CN disclosed
CN-116073004-B Isolation film, secondary battery, battery module, battery pack and electricity utilization device 宁德时代新能源科技股份有限公司 2024-02-02 CN disclosed
CN-220123369-U Memory device 台湾积体电路制造股份有限公司 2023-12-01 CN disclosed
CN-116073004-A Isolation film, secondary battery, battery module, battery pack and electricity utilization device 宁德时代新能源科技股份有限公司 2023-05-05 CN disclosed
WO-2023071541-A1 ISOLATION FILM, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK AND ELECTRICAL APPARATUS 宁德时代新能源科技股份有限公司 2023-05-04 WO disclosed
US-9039933-B2 Eu2+-activated aluminates nanobelts, whiskers, and powders, methods of making the same, and uses thereof UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. (US) 2015-05-26 US disclosed
CN-101747898-B Trivalent europium-doped barium fluochloride nano luminescent material and preparation method thereof FUJIAN MATTER STRUCTURE 2013-08-14 CN disclosed
CN-1926259-A Active metal source and method for depositing thioaluminate phosphors IFIRE TECHNOLOGY CORP (CA) 2007-03-07 CN disclosed
CN-1808732-A Inorganic electroluminescent display and its manufacturing method SVA ELECTRON CO LTD (CN) 2006-07-26 CN disclosed
US-4847533-A EUROPIUM ACTIVATED BARIUM MAGNESIUM ALUMINATE AND RARE EARTH OXIDE MIXTURE ON CALCIUM HALOAPATITE LAYER; COLOR RENDITION GENERAL ELECTRIC COMPANY (US) 1989-07-11 US disclosed
US-4704538-A TERBIUM ACTIVATED RARE EARTH OXYSULFIDE, EUROPIUM ACTIVATED BARIUM FLUOROHALIDE FUJI PHOTO FILM CO., LTD. (JP) 1987-11-03 US disclosed
EP-0103302-B1 RADIOGRAPHIC INTENSIFYING SCREEN FUJI PHOTO FILM CO., LTD. (JP) 1986-07-30 EP disclosed
EP-0103302-A2 Radiographic intensifying screen FUJI PHOTO FILM CO., LTD. (JP) 1984-03-21 EP disclosed
US-4080306-A BARIUM, FLUORINE, CHLORINE, EUROPIUM ACTIVATOR E. I. DU PONT DE NEMOURS AND COMPANY (US) 1978-03-21 US disclosed