SCHEMBL23713667

SCHEMBL23713667

CCC=C(CCl)CCl

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12558778 0.88
SCHEMBL11363190 0.83
SCHEMBL4849732 0.77
SCHEMBL4849729 0.77
SCHEMBL22167560 0.77
SCHEMBL7888431 0.75
SCHEMBL73306 0.72
SCHEMBL2769373 0.71
SCHEMBL11435831 0.71
SCHEMBL2769371 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115038810-B Raw material for chemical vapor deposition comprising organic ruthenium compound and chemical vapor deposition method using same 田中贵金属工业株式会社 2024-07-19 CN disclosed
US-11913110-B2 Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition TANAKA KIKINZOKU KOGYO K.K. (JP) 2024-02-27 US disclosed
US-11913110-B2 Raw material for chemical deposition containing organoruthenium compound, and chemical deposition method using the raw material for chemical deposition TANAKA KIKINZOKU KOGYO K.K. (JP) 2024-02-27 US disclosed
WO-2021153639-A1 CHEMICAL VAPOR DEPOSITION RAW MATERIAL COMPRISING ORGANIC RUTHENIUM COMPOUND, AND CHEMICAL VAPOR DEPOSITION METHOD USING SAID CHEMICAL VAPOR DEPOSITION RAW MATERIAL 田中貴金属工業株式会社 2021-08-05 WO disclosed