Known targets — ChEMBL curated mechanism
ADRA2AADRA2BADRA2CADRB2AGTR1AVPR1AAVPR1BAVPR2BDKRB2CALCRCHRNA3CHRNB4ESR1ESR2GHSRGNRHRGSC1HSPA8MALT1MC1RMC4RNOS1NOS2NOS3OPRK1OXTRRAMP1RAMP2RAMP3SCN5ASSTR1SSTR2SSTR3SSTR4SSTR5dacAdacBdacCfolPftsImrcAmrcBmrdArplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of Acetic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Acetic Acid SCHEMBL5576564 | 0.94 | FFAR3 (0.88) | — | |
| Acetic Acid SCHEMBL8586375 | 0.94 | FFAR3 (0.88) | — | |
| Acetic Acid SCHEMBL29768744 | 0.94 | FFAR3 (0.88) | — | |
| Acetic Acid SCHEMBL8585131 | 0.94 | FFAR3 (0.88) | — | |
| Acetic Acid SCHEMBL9296969 | 0.89 | — | — | |
| Acetic Acid SCHEMBL9098032 | 0.89 | — | — | |
| Acetic Acid SCHEMBL10442572 | 0.89 | — | — | |
| Acetic Acid SCHEMBL14660922 | 0.89 | — | — | |
| Acetic Acid SCHEMBL10443185 | 0.89 | — | — | |
| Acetic Acid SCHEMBL10442557 | 0.89 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8394668-B2 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-12 | — | — | US | claimed |
| EP-2369641-B1 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO LTD (KR) | 2015-09-02 | — | — | EP | disclosed |
| US-9053979-B2 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-06-09 | — | — | US | disclosed |
| EP-2842920-A1 | METHOD FOR PRODUCING GLASS SUBSTRATE WITH SILICON OXIDE FILM CONTAINING INORGANIC FINE PARTICLES | Asahi Glass Company, Limited (JP) | 2015-03-04 | — | — | EP | disclosed |
| US-20150030778-A1 | PROCESS FOR PRODUCING GLASS SUBSTRATE PROVIDED WITH INORGANIC FINE PARTICLE-CONTAINING SILICON OXIDE FILM | ASAHI GLASS COMPANY, LIMITED (JP) | 2015-01-29 | — | — | US | disclosed |
| US-20130248851-A1 | Oxide Thin Film, Methods Of Manufacturing Oxide Thin Film And Electronic Devices Including Oxide Thin Film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-09-26 | — | — | US | disclosed |
| US-8394668-B2 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2013-03-12 | — | — | US | disclosed |
| US-20110233539-A1 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-29 | — | — | US | disclosed |
| EP-2369641-A2 | Oxide thin film, methods of manufacturing oxide thin film and electronic devices including oxide thin film | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-09-28 | — | — | EP | disclosed |