SCHEMBL237763

SCHEMBL237763

[AlH3].[Sc]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27845195 1.00
SCHEMBL28193931 1.00
SCHEMBL1955166 0.82
SCHEMBL4867535 0.82
SCHEMBL1930282 0.82
Ammonia Solution, Strong SCHEMBL25209109 0.82
SCHEMBL5570762 0.82
SCHEMBL18043783 0.82
SCHEMBL8427385 0.82
Water SCHEMBL22076909 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1749 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3900009-B1 METHOD TO PRODUCE A PIEZOELECTRIC COATING AND VACUUM APPARATUS EVATEC AG (CH) 2026-05-27 EP claimed
CN-122061050-A Ternary rare earth modified high-strength aluminum-silicon alloy and preparation method thereof 山东宏桥轻量化科技有限公司 2026-05-19 CN claimed
CN-117802366-B High specific strength 3D printing aluminum alloy and preparation method thereof 有研增材技术有限公司 2026-05-15 CN claimed
US-12601040-B2 Aluminum scandium alloy target and method of manufacturing the same HUNAN RARE EARTH METAL MATERIAL RESEARCH INSTITUTE CO., LTD. (CN) 2026-04-14 US claimed
US-20250301713-A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-09-25 US claimed
US-20250232959-A1 DEPOSITION TOOL WITH DIELECTRIC COATED CHAMBER SIDEWALLS TO IMPROVE ELECTROMANGNETIC FIELD UNIFORMITY TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-07-17 US claimed
US-12363957-B2 Semiconductor device and method of fabricating the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-07-15 US claimed
CN-120193188-A Grain refined Al-Mg-Cu-Sc aluminum alloy intermediate alloy and preparation method thereof 广西电网有限责任公司电力科学研究院 2025-06-24 CN claimed
CN-120201922-A Aluminum nitride doped scandium ferroelectric film memristor and preparation method thereof 河北大学 2025-06-24 CN claimed
CN-120115884-A High-strength aluminum alloy welding wire for vacuum electron beam material increase and preparation method thereof 北京宇航系统工程研究所 2025-06-10 CN claimed
CN-1260397-C Production method of high purity aluminium scandium alloy ALUMINIUM CORP OF CHINA LTD (CN) 2006-06-21 CN claimed
US-20060032432-A1 Bulk single crystal gallium nitride and method of making same WOLFSPEED, INC. 2006-02-16 US claimed
CN-1664170-A Method for producing aluminium and aluminium alloy by low temperature electrolysis UNIV SCIENCE & TECH BEIJING (CN) 2005-09-07 CN claimed
CN-1605641-A Method for preparation of aluminum scandium alloy by alumino-thermic reduction method HUNAN RES INST OF RARE EARTH M (CN) 2005-04-13 CN claimed
CN-1184356-C Method of producing aluminium scandium alloy by electrolysis CHINESEK ALUMINIUM INDUSTRY CO (CN) 2005-01-12 CN claimed
CN-1514042-A Production method of high purity aluminium scandium alloy 中国铝业股份有限公司 2004-07-21 CN claimed
CN-1508273-A Solid or hollow extruded section containing scandium-aluminum alloy 萧仲志 2004-06-30 CN claimed
CN-1410599-A Method of producing aluminium scandium alloy by electrolysis CHINESE ALUMINIUM INDUSTRY CO (CN) 2003-04-16 CN claimed
US-5442235-A Semiconductor device having an improved metal interconnect structure MOTOROLA INC. (US) 1995-08-15 US claimed
US-5420878-A Thulium doped lithium fluoride LIGHTWAVE ELECTRONICS CORPORATION (US) 1995-05-30 US claimed