⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2766864 | 0.87 | — | — | |
| SCHEMBL14322342 | 0.87 | — | — | |
| SCHEMBL4807859 | 0.87 | — | — | |
| SCHEMBL454133 | 0.82 | — | — | |
| SCHEMBL6931147 | 0.82 | — | — | |
| SCHEMBL7170381 | 0.82 | — | — | |
| SCHEMBL30549558 | 0.82 | — | — | |
| SCHEMBL80291 | 0.82 | — | — | |
| SCHEMBL21273333 | 0.82 | — | — | |
| SCHEMBL28084 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 764 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11710744-B2 | Semiconductor device | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. | 2023-07-25 | — | — | US | claimed |
| CN-115835645-A | Flash memory storage device | 天津市滨海新区微电子研究院 | 2023-03-21 | — | — | CN | claimed |
| US-10770500-B2 | Solid state imaging device for reducing dark current | SONY CORPORATION (JP) | 2020-09-08 | — | — | US | claimed |
| EP-3028309-B1 | LOGIC FINFET HIGH-K/CONDUCTIVE GATE EMBEDDED MULTIPLE TIME PROGRAMMABLE FLASH MEMORY | QUALCOMM INC (US) | 2020-03-25 | — | — | EP | claimed |
| US-20190148444-A1 | SOLID STATE IMAGING DEVICE FOR REDUCING DARK CURRENT, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS | SONY CORPORATION (JP) | 2019-05-16 | — | — | US | claimed |
| US-10192921-B2 | Solid state imaging device for reducing dark current, method of manufacturing the same, and imaging apparatus | SONY CORPORATION (JP) | 2019-01-29 | — | — | US | claimed |
| US-20180204869-A1 | SOLID STATE IMAGING DEVICE FOR REDUCING DARK CURRENT, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS | SONY CORPORATION (JP) | 2018-07-19 | — | — | US | claimed |
| US-9954021-B2 | Solid-state imaging device, method for manufacturing the same, and imaging apparatus | SONY CORPORATION (JP) | 2018-04-24 | — | — | US | claimed |
| US-9735192-B2 | Solid state imaging device for reducing dark current and imaging apparatus | SONY CORPORATION (JP) | 2017-08-15 | — | — | US | claimed |
| US-20170104024-A1 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS | SONY CORP (JP) | 2017-04-13 | — | — | US | claimed |
| US-8288836-B2 | Solid state imaging device capable of supressing generation of dark current | SONY CORPORATION (JP) | 2012-10-16 | — | — | US | claimed |
| US-8278168-B2 | Methods of forming a semiconductor device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-10-02 | — | — | US | claimed |
| US-20120009746-A1 | METHODS OF FORMING A SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-01-12 | — | — | US | claimed |
| US-8044469-B2 | Semiconductor device and associated methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-10-25 | — | — | US | claimed |
| US-20110001183-A1 | Memory device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-01-06 | — | — | US | claimed |
| US-7851285-B2 | Non-volatile memory device and method for fabricating the same | HYNIX SEMICONDUCTOR INC. (KR) | 2010-12-14 | — | — | US | claimed |
| US-20100072556-A1 | Semiconductor device and associated methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-03-25 | — | — | US | claimed |
| US-20090134451-A1 | Semiconductor device and method of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. | 2009-05-28 | — | — | US | claimed |
| US-20080251836-A1 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME | HYNIX SEMICONDUCTOR INC. (KR) | 2008-10-16 | — | — | US | claimed |
| US-20080135946-A1 | Read only memory cell having multi-layer structure for storing charges and manufacturing method thereof | INNOLUX DISPLAY CORP. | 2008-06-12 | — | — | US | claimed |