SCHEMBL23804657

SCHEMBL23804657

FC(F)(F)CP

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL24603579 0.70
SCHEMBL442671 0.59
Norflurane SCHEMBL9499 0.59
SCHEMBL166134 0.59
Norflurane SCHEMBL1173735 0.59
SCHEMBL25287 0.59
SCHEMBL8862217 0.59
Norflurane SCHEMBL11036325 0.59
Norflurane SCHEMBL5466910 0.59
SCHEMBL21611873 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108183229-A Aluminium lithium alloy composite negative plate of a kind of solid state battery and preparation method thereof and application 清陶(昆山)能源发展有限公司 2018-06-19 CN claimed
US-20260090293-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM RES CORP (US) 2026-03-26 US disclosed
US-12568781-B2 Selective silicon trim by thermal etching LAM RESEARCH CORPORATION (US) 2026-03-03 US disclosed
WO-2026044028-A1 APPARATUSES AND TECHNIQUES FOR THERMAL ETCHING LAM RESEARCH CORPORATION (US) 2026-02-26 WO disclosed
US-20260052923-A1 SELECTIVE SIGE ETCHING USING THERMAL F2 WITH ADDITIVE LAM RES CORP (US) 2026-02-19 US disclosed
US-20260026274-A1 IN SITU DECLOGGING IN PLASMA ETCHING LAM RES CORP (US) 2026-01-22 US disclosed
WO-2025235908-A1 PASSIVATION FOR ETCHING OF SEMICONDUCTOR MATERIALS WITH SEAM-LIKE DEFECTS LAM RESEARCH CORPORATION (US) 2025-11-13 WO disclosed
EP-4591341-A1 SEMICONDUCTOR STACKS AND PROCESSES THEREOF LAM Research Corporation (US) 2025-07-30 EP disclosed
US-20250226233-A1 IN SITU DECLOGGING IN PLASMA ETCHING LAM RESEARCH CORPORATION 2025-07-10 US disclosed
US-20250183051-A1 SELECTIVE PRECISION ETCHING OF SEMICONDUCTOR MATERIALS LAM RESEARCH CORPORATION 2025-06-05 US disclosed
WO-2021202411-A1 SELECTIVE PRECISION ETCHING OF SEMICONDUCTOR MATERIALS LAM RESEARCH CORPORATION (US) 2021-10-07 WO disclosed
WO-2021183922-A1 STABILIZATION OF CARBON DEPOSITION PRECURSORS LIKE C2H2 LAM RESEARCH CORPORATION (US) 2021-09-16 WO disclosed
CN-109994777-A Electrolyte solution and secondary battery 宁德时代新能源科技股份有限公司 2019-07-09 CN disclosed
CN-109994778-A Electrolyte solution and secondary battery 宁德时代新能源科技股份有限公司 2019-07-09 CN disclosed
CN-107431245-A Non-aqueous electrolyte for secondary battery and the secondary cell for possessing it 斯泰拉化工公司 2017-12-01 CN disclosed
CN-107408732-A Non-aqueous electrolyte for secondary battery and the secondary cell for possessing it 斯泰拉化工公司 2017-11-28 CN disclosed
CN-107210487-A Non-aqueous electrolyte for secondary battery and the secondary cell for possessing it 斯泰拉化工公司 2017-09-26 CN disclosed
CN-107112583-A Lithium ion secondary battery 日立麦克赛尔株式会社 2017-08-29 CN disclosed
CN-106165175-A High molecular electrolyte composition and use its polyelectrolyte membrane, film electrode composite element and polymer electrolyte fuel cell 东丽株式会社 2016-11-23 CN disclosed
CN-103959547-B Lithium secondary battery 日立麦克赛尔株式会社 2016-10-26 CN disclosed