SCHEMBL24029331

SCHEMBL24029331

C=C(CF)C(=O)OCC(C)C

nearest known ligand 0.61

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.61
ALDH1A1 P00352 3/20 0.37
SMN1; SMN2 Q16637 1/20 0.32
HPGD P15428 1/20 0.30
TDP1 Q9NUW8 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
RAB9A P51151 1/20 0.30
P2RX4 Q99571 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1473219 0.81 TSHR (0.63) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL5605430 0.81 TSHR (0.63) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL5089974 0.81 TSHR (0.63) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL1521320 0.79 TSHR (0.61) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL27976578 0.79 TSHR (0.61) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL23909439 0.78 TSHR (0.65) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL20262429 0.78 TSHR (0.71) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL2240011 0.78 TSHR (0.59) TSHRALDH1A1SMN1; SMN2HPGDRAB9A
SCHEMBL1060689 0.78 TSHR (0.59) TSHRALDH1A1SMN1; SMN2HPGDTDP1
SCHEMBL29012829 0.78 TSHR (0.59) TSHRALDH1A1SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2021231517-A1 CURABLE OXAMATE ESTERS AND FORMULATIONS MADE THEREFROM Henkel IP & Holding GmbH (DE) 2021-11-18 WO disclosed
CN-109970890-A Non-metallocene catalyst and preparation method and application 北京国达恒泰科贸有限责任公司 2019-07-05 CN disclosed
CN-103154042-B Photoetching technique multipolymer and manufacture method thereof, anti-corrosion agent composition, forms the manufacture method of the substrate of pattern, the evaluation method of multipolymer, multipolymer composition analytic method MITSUBISHI RAYON CO.,LTD. (JP) 2015-12-16 CN disclosed
CN-103154042-A Copolymers for lithography and method for producing same, resist composition, method for producing substrate with pattern formed thereupon, method for evaluating copolymers, and method for analyzing copolymer compositions MITSUBISHI RAYON CO 2013-06-12 CN disclosed
CN-1930194-B Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO 2011-03-30 CN disclosed
CN-101823989-A Resist with polymkeric substance, resist composition and method of manufacturing pattern and resist with the polymkeric substance starting compound MITSUBISHI RAYON CO 2010-09-08 CN disclosed
CN-1976962-B Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO 2010-06-23 CN disclosed
CN-1976962-A Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO (JP) 2007-06-06 CN disclosed
CN-1930194-A Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO (JP) 2007-03-14 CN disclosed