SCHEMBL2405765

SCHEMBL2405765

[Al+3].[Al+3].[La].[La].[O-2].[O-2].[O-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3799184 0.87
SCHEMBL5428327 0.87
SCHEMBL7505907 0.87
SCHEMBL1509632 0.87
SCHEMBL5447890 0.87
SCHEMBL4956668 0.82
SCHEMBL5488590 0.82
SCHEMBL16731977 0.82
SCHEMBL10379776 0.82
SCHEMBL2945455 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20110212319-A1 CARBON NANOTUBE DEVICE AND A WAFER FOR GROWING CARBON NANOTUBE CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, MINISTRY OF NATIONAL DEFENSE (TW) 2011-09-01 US claimed
US-20100124655-A1 METHOD FOR FABRICATING CARBON NANOTUBE, WAFER FOR GROWING CARBON NANOTUBE, AND CARBON NANOTUBE DEVICE CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, MINISTRY OF NATIONAL DEFENSE (TW) 2010-05-20 US claimed
US-20070105262-A1 Method for fabricating an integrated circuit with a CMOS manufacturing process INFINEON TECHNOLOGIES AG (DE) 2007-05-10 US claimed
US-20060128108-A1 Method for forming a titanium nitride layer and method for forming a lower electrode of a MIM capacitor using the titanium nitride layer SAMSUNG ELECTRONICS CO., LTD. 2006-06-15 US claimed
EP-0531095-A1 Single phase metal-alumina made by sol-gel processing FORD MOTOR COMPANY LIMITED (GB) 1993-03-10 EP claimed
US-5134107-A Single phase metal-alumina made by sol-gel processing FORD MOTOR COMPANY (US) 1992-07-28 US claimed
CN-110461467-A Carbon monoxide-olefin polymeric comprising colloid platinum family metal nanoparticle BASF CORP 2019-11-15 CN disclosed
CN-110402168-A CO oxidation, hydrocarbon oxidation and NO oxidation and improved sulfation/desulfating behavior Pt/Pd DOC with enhancing BASF SE 2019-11-01 CN disclosed
CN-104937225-B Automobile catalyst compound with double-metal layer 巴斯夫公司 2019-07-30 CN disclosed
CN-109937088-A Catalyst for exhaust gas purification and method for exhaust gas purification 优美科催化剂日本有限公司 2019-06-25 CN disclosed
CN-109641196-A Palladium diesel oxidation catalyst 巴斯夫公司 2019-04-16 CN disclosed
CN-109475855-A The carbon monoxide-olefin polymeric containing magnetic material suitable for induction heating 巴斯夫公司 2019-03-15 CN disclosed
CN-108136373-A Diesel oxidation catalyst 巴斯夫公司 2018-06-08 CN disclosed
US-20100298586-A1 METHOD FOR PRODUCING FATTY ACID ALKYL ESTERS BAYER TECHNOLOGY SERVICES GMBH (DE) 2010-11-25 US disclosed
US-20100124655-A1 METHOD FOR FABRICATING CARBON NANOTUBE, WAFER FOR GROWING CARBON NANOTUBE, AND CARBON NANOTUBE DEVICE CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, MINISTRY OF NATIONAL DEFENSE (TW) 2010-05-20 US disclosed
US-20080044986-A1 METHOD FOR IMPROVED DIELECTRIC PERFORMANCE INFINEON TECHNOLOGIES AG (DE) 2008-02-21 US disclosed
US-20070105262-A1 Method for fabricating an integrated circuit with a CMOS manufacturing process INFINEON TECHNOLOGIES AG (DE) 2007-05-10 US disclosed
US-20060128108-A1 Method for forming a titanium nitride layer and method for forming a lower electrode of a MIM capacitor using the titanium nitride layer SAMSUNG ELECTRONICS CO., LTD. 2006-06-15 US disclosed
EP-0531095-A1 Single phase metal-alumina made by sol-gel processing FORD MOTOR COMPANY LIMITED (GB) 1993-03-10 EP disclosed
US-5134107-A Single phase metal-alumina made by sol-gel processing FORD MOTOR COMPANY (US) 1992-07-28 US disclosed