Zinc Ion

Zinc Ion

SCHEMBL2419645

[In+3].[In+3].[O-2].[O-2].[O-2].[O-2].[O-2].[SiH4].[SiH4].[Zn+2].[Zn+2]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Zinc Ion SCHEMBL3791494 0.87
Zinc Ion SCHEMBL29350087 0.87
Zinc Ion SCHEMBL30088527 0.87
SCHEMBL6360890 0.87
Zinc Ion SCHEMBL142713 0.87
Zinc Ion SCHEMBL29630377 0.87
Zinc Ion SCHEMBL29395959 0.87
SCHEMBL4262932 0.87
Zinc Ion SCHEMBL19272482 0.87
Zinc Ion SCHEMBL24564 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 896 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
CN-122069712-A Semiconductor device and method for manufacturing the same 三星电子株式会社 2026-05-19 CN claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-12593474-B2 Semiconductor device including channel structure comprising different compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-31 US claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20260025968-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20260025973-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20250351338-A1 SEMICONDUCTOR DEVICES SAMSUNG ELECTRONICS CO LTD (KR) 2025-11-13 US claimed
US-20170092772-A1 METHOD OF CONTROLLING ELECTRIC CONDUCTIVITY OF METAL OXIDE THIN FILM AND THIN FILM TRANSISTOR INCLUDING THE METAL OXIDE FILM HAVING THE CONTROLLED ELECTRIC CONDUCTIVITY Industry-Academic Cooperation Foundation of Ajou University (KR) 2017-03-30 US claimed
US-20170084761-A1 PHOTOELECTRIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2017-03-23 US claimed
EP-3144980-A1 PHOTOELECTRIC DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME Samsung Electronics Co., Ltd. (KR) 2017-03-22 EP claimed
EP-2369627-B1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors SAMSUNG ELECTRONICS CO LTD (KR) 2017-01-25 EP claimed
US-9236495-B2 Oxide thin film transistor, method for fabricating TFT, display device having TFT, and method for fabricating the same LG DISPLAY CO., LTD. (KR) 2016-01-12 US claimed
US-8481362-B2 Thin film transistor and method for preparing the same LG CHEM, LTD. (KR) 2013-07-09 US claimed
EP-2369627-A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-28 EP claimed
US-20110227064-A1 Thin film transistors, methods of manufacturing thin film transistors, and semiconductor device including thin film transistors SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-09-22 US claimed
US-20100117085-A1 THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME LG DISPLAY CO., LTD. (KR) 2010-05-13 US claimed
WO-2008133457-A1 THIN FILM TRANSISTOR AND METHOD FOR PREPARING THE SAME LG CHEM, LTD. (KR) 2008-11-06 WO claimed