SCHEMBL24356

SCHEMBL24356

[GeH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15993730 1.00
SCHEMBL27861629 1.00
Fluoride Ion SCHEMBL26966092 0.71
SCHEMBL277978 0.71
SCHEMBL23462252 0.00
SCHEMBL25435013 0.00
Methane SCHEMBL23088734 0.00
SCHEMBL23462141 0.00
Potassium Ion SCHEMBL23462035 0.00 CA4 (0.50)
Hydrogen Sulfide SCHEMBL23805181 0.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 7010 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115440594-B Semiconductor device and method for manufacturing the same 台湾积体电路制造股份有限公司 2026-05-12 CN claimed
EP-4609015-B1 METHOD OF ELECTROCHEMICAL CONVERSION OF AQUEOUS SOLUTIONS OF CARBONATES, BICARBONATES, CO2, C2-C5 ACIDS, SALTS OF C2-C5 ACIDS AND MIXTURES THEREOF USTAV CHEMICKYCH PROCESU AV CR V V I (CZ) 2026-05-06 EP claimed
EP-4732339-A1 QUANTUM DOT STRUCTURE UNIT CELL, QUANTUM DOT SYSTEM AND METHOD OF MANUFACTURING THE SAME Technische Universiteit Delft (NL) 2026-04-29 EP claimed
US-20260107547-A1 HIGH SENSITIVITY ETCHING WITH GERMANIUM-CONTAINING GASES TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-16 US claimed
US-20260082669-A1 INTEGRATED CIRCUITS THAT INCLUDE GERMANIDE LAYER(S) IN BACKSIDE CONTACTS TO TRANSISTOR DEVICES FORMED IN THE INTEGRATED CIRCUIT (IC) QUALCOMM INC (US) 2026-03-19 US claimed
US-12581652-B2 Three-dimensional memory devices having channel cap structures and methods for forming the same SanDisk Technologies, Inc. (US) 2026-03-17 US claimed
EP-3758047-B1 AMORPHIZATION AND REGROWTH OF SOURCE-DRAIN REGIONS FROM THE BOTTOM-SIDE OF A SEMICONDUCTOR ASSEMBLY INTEL CORP (US) 2026-02-25 EP claimed
US-20260047358-A1 HIGH GROWTH RATE SELECTIVE SI:P PROCESS APPLIED MATERIALS INC (US) 2026-02-12 US claimed
US-20260025969-A1 METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-01-22 US claimed
US-12520558-B2 High selectivity etching with germanium-containing gases TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2026-01-06 US claimed
US-4563217-A NONIONIC SURFACTANT STABILIZERS HITACHI, LTD. (JP) 1986-01-07 US claimed
EP-0132594-A1 Electroless copper plating solution HITACHI, LTD. (JP) 1985-02-13 EP claimed
EP-0130416-A1 A process for making an ohmic contact to an N-type conductivity group III-V semiconductor compound and a semiconductor device having such an ohmic contact International Business Machines Corporation (US) 1985-01-09 EP claimed
US-4466992-A VAPOR DEPOSITION, SEMICONDUCTORS PHILLIPS PETROLEUM COMPANY (US) 1984-08-21 US claimed
US-4439536-A Hydrocarbon cracking catalyst PHILLIPS PETROLEUM COMPANY (US) 1984-03-27 US claimed
US-4386015-A TREATING AGENT IS GERMANIUM OR COMPOUNDS OF GERMANIUM PHILLIPS PETROLEUM COMPANY (US) 1983-05-31 US claimed
US-4334979-A TO PASSIVATE METAL DEPOSITS AND INCREASE YIELD OF GASOLINE PHILLIPS PETROLEUM COMPANY (US) 1982-06-15 US claimed
EP-0038047-A2 Cracking catalyst composition, passivating process and germanium compounds PHILLIPS PETROLEUM COMPANY (US) 1981-10-21 EP claimed
US-4137383-A Process for stabilizing chlorine-containing resins SEKISUI KAGAKU KOGYO KABUSHIKI KAISHA (JP) 1979-01-30 US claimed
US-4080317-A POLYESTERS CIBA-GEIGY AG (CH) 1978-03-21 US claimed