SCHEMBL2444682

SCHEMBL2444682

[Ge+4].[Ge+4].[Ge+4].[SbH6-3].[SbH6-3].[SbH6-3].[SbH6-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL297300 1.00
SCHEMBL4223772 0.82
SCHEMBL5608862 0.82
SCHEMBL10799626 0.82
SCHEMBL11064100 0.82
SCHEMBL53481 0.71
Selenium SCHEMBL7732281 0.71
SCHEMBL14829129 0.71
SCHEMBL2356716 0.71
Hydrogen Sulfide SCHEMBL20603104 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 97 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11722092-B2 Two-stage combustor for thermophotovoltaic generator PRECISION COMBUSTION, INC. (US) 2023-08-08 US claimed
US-20230124247-A1 TWO-STAGE COMBUSTOR FOR THERMOPHOTOVOLTAIC GENERATOR PRECISION COMBUSTION, INC. 2023-04-20 US claimed
CN-111367146-B Nano photoetching method of phase change-thermal decomposition type composite photoresist 苏州科技大学 2022-08-26 CN claimed
CN-111367146-A Nano photoetching method of phase change-thermal decomposition type composite photoresist 苏州科技大学 2020-07-03 CN claimed
CN-106784000-B Semiconductor device structure and forming method thereof 台湾积体电路制造股份有限公司 2020-05-15 CN claimed
US-10355133-B2 Method for forming a semiconductor device including a stacked wire structure TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2019-07-16 US claimed
US-10020371-B2 Contact techniques and configurations for reducing parasitic resistance in nanowire transistors INTEL CORPORATION (US) 2018-07-10 US claimed
CN-104160482-B Contact techniques and configurations for reducing parasitic resistance in nanowire transistors 英特尔公司 2018-01-09 CN claimed
US-20170301787-A1 SEMICONDUCTOR DEVICE INCLUDING A STACKED WIRE STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2017-10-19 US claimed
US-9735274-B2 Semiconductor device including a stacked wire structure TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2017-08-15 US claimed
US-20170148907-A1 SEMICONDUCTOR DEVICE INCLUDING A STACKED WIRE STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2017-05-25 US claimed
US-20160372560-A1 CONTACT TECHNIQUES AND CONFIGURATIONS FOR REDUCING PARASITIC RESISTANCE IN NANOWIRE TRANSISTORS TAHOE RESEARCH, LTD. (IE) 2016-12-22 US claimed
US-20150380552-A1 TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME NATIONAL APPLIED RESEARCH LABORATORIES (TW) 2015-12-31 US claimed
US-9123790-B2 Contact techniques and configurations for reducing parasitic resistance in nanowire transistors INTEL CORPORATION (US) 2015-09-01 US claimed
CN-104160482-A Contact techniques and configurations for reducing parasitic resistance in nanowire transistors INTEL CORP 2014-11-19 CN claimed
US-20140209865-A1 CONTACT TECHNIQUES AND CONFIGURATIONS FOR REDUCING PARASITIC RESISTANCE IN NANOWIRE TRANSISTORS TAHOE RESEARCH, LTD. (IE) 2014-07-31 US claimed
WO-2013101004-A1 CONTACT TECHNIQUES AND CONFIGURATIONS FOR REDUCING PARASITIC RESISTANCE IN NANOWIRE TRANSISTORS INTEL CORPORATION (US) 2013-07-04 WO claimed
US-8279736-B2 Multilevel recording method and system thereof NATIONAL TSING HUA UNIVERSITY (TW) 2012-10-02 US claimed
US-20120106305-A1 Multilevel Recording Method and System Thereof NATIONAL TSING HUA UNIVERSITY (TW) 2012-05-03 US claimed
US-8022547-B2 Non-volatile memory cells including small volume electrical contact regions SEAGATE TECHNOLOGY LLC (US) 2011-09-20 US claimed