⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Dimethylamine SCHEMBL10624973 | 1.00 | — | — | |
| Dimethylamine SCHEMBL3978349 | 0.80 | — | — | |
| Dimethylamine SCHEMBL12415750 | 0.76 | — | — | |
| Dimethylamine SCHEMBL1030 | 0.76 | — | — | |
| Dimethylamine SCHEMBL1330452 | 0.76 | — | — | |
| Dimethylamine SCHEMBL5164633 | 0.76 | — | — | |
| SCHEMBL58777 | 0.76 | — | — | |
| Dimethylamine SCHEMBL13695986 | 0.76 | — | — | |
| Dimethylamine SCHEMBL392668 | 0.76 | — | — | |
| SCHEMBL27875542 | 0.76 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 76 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2024137050-A1 | CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2024-06-27 | — | — | WO | claimed |
| US-20240213093-A1 | CATALYST-ENHANCED CHEMICAL VAPOR DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2024-06-27 | — | — | US | claimed |
| US-20230411142-A1 | METAL OXIDE PRECLEANING PRIOR TO METAL FILLING | TOKYO ELECTRON LIMITED (JP) | 2023-12-21 | — | — | US | claimed |
| WO-2023164685-A1 | SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2023-08-31 | — | — | WO | claimed |
| US-20230274932-A1 | SELECTIVE INHIBITION FOR SELECTIVE METAL DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2023-08-31 | — | — | US | claimed |
| US-11621190-B2 | Method for filling recessed features in semiconductor devices with a low-resistivity metal | TOKYO ELECTRON LIMITED (JP) | 2023-04-04 | — | — | US | claimed |
| US-11087973-B2 | Method of selective deposition for BEOL dielectric etch | TOKYO ELECTRON LIMITED (JP) | 2021-08-10 | — | — | US | claimed |
| US-11024535-B2 | Method for filling recessed features in semiconductor devices with a low-resistivity metal | TOKYO ELECTRON LIMITED (JP) | 2021-06-01 | — | — | US | claimed |
| US-10014213-B2 | Selective bottom-up metal feature filling for interconnects | TOKYO ELECTRON LIMITED (JP) | 2018-07-03 | — | — | US | claimed |
| US-20180174897-A1 | METHOD OF SELECTIVE DEPOSITION FOR BEOL DIELECTRIC ETCH | TOKYO ELECTRON LIMITED (JP) | 2018-06-21 | — | — | US | claimed |
| US-20170110368-A1 | SELECTIVE BOTTOM-UP METAL FEATURE FILLING FOR INTERCONNECTS | TOKYO ELECTRON LIMITED (JP) | 2017-04-20 | — | — | US | claimed |
| CN-102822949-B | Method for surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices | TOKYO ELECTRON LTD. (JP) | 2015-07-29 | — | — | CN | claimed |
| CN-104379633-A | Composition for surface treatment, methods of preparing surface-treated article, and surface treated article | DOW CORNING | 2015-02-25 | — | — | CN | claimed |
| CN-103430291-A | Ultraviolet assisted silylation for recovery and sealing of damaged low dielectric constant films | APPLIED MATERIALS INC | 2013-12-04 | — | — | CN | claimed |
| CN-101154583-B | Method of forming pattern of semiconductor device | HYNIX SEMICONDUCTOR INC | 2012-12-19 | — | — | CN | claimed |
| CN-102822949-A | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices | TOKYO ELECTRON LTD | 2012-12-12 | — | — | CN | claimed |
| US-8178439-B2 | Surface cleaning and selective deposition of metal-containing cap layers for semiconductor devices | TOKYO ELECTRON LIMITED (JP) | 2012-05-15 | — | — | US | claimed |
| WO-2011123368-A1 | SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2011-10-06 | — | — | WO | claimed |
| US-20110244680-A1 | SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2011-10-06 | — | — | US | claimed |
| CN-101154583-A | Method of forming pattern of semiconductor device | HYNIX SEMICONDUCTOR INC (KR) | 2008-04-02 | — | — | CN | claimed |