⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15754324 | 0.87 | — | — | |
| SCHEMBL11320477 | 0.87 | — | — | |
| SCHEMBL7776333 | 0.87 | — | — | |
| SCHEMBL4575669 | 0.87 | — | — | |
| SCHEMBL7699346 | 0.87 | — | — | |
| SCHEMBL4346110 | 0.87 | — | — | |
| SCHEMBL11050474 | 0.78 | — | — | |
| SCHEMBL7644747 | 0.67 | — | — | |
| SCHEMBL15936511 | 0.58 | — | — | |
| SCHEMBL7899847 | 0.58 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 494 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12610537-B2 | Semiconductor structure with buffer layer between conductive contact and word line and method for forming the same, and memory | CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) | 2026-04-21 | — | — | US | claimed |
| US-20250266454-A1 | ANODE MATERIAL, NEGATIVE ELECTRODE PLATE AND BATTERY | BTR NEW MATERIAL GROUP CO., LTD. (CN) | 2025-08-21 | — | — | US | claimed |
| EP-4601037-A1 | NEGATIVE ELECTRODE MATERIAL, NEGATIVE ELECTRODE SHEET AND BATTERY | BTR NEW MATERIAL GROUP CO., LTD. (CN) | 2025-08-13 | — | — | EP | claimed |
| CN-222970610-U | Cold rolling device for high-silicon nickel-based alloy pipe | 江西卓跃特种合金有限公司 | 2025-06-13 | — | — | CN | claimed |
| CN-119922911-A | Semiconductor structure and forming method thereof | 长鑫科技集团股份有限公司 | 2025-05-02 | — | — | CN | claimed |
| CN-119764402-A | Silicon-carbon composite material, preparation method and battery | 蜂巢能源科技股份有限公司 | 2025-04-04 | — | — | CN | claimed |
| CN-116062730-B | Preparation method of pre-lithiated silicon-based composite material, pre-lithiated silicon-based composite material and application thereof | 胜华新材料科技(眉山)有限公司 | 2025-03-11 | — | — | CN | claimed |
| CN-113903665-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2025-01-14 | — | — | CN | claimed |
| CN-119050156-A | SiC MOSFET structure and manufacturing method thereof | 株洲中车时代半导体有限公司 | 2024-11-29 | — | — | CN | claimed |
| CN-113838933-B | Semiconductor structure and forming method thereof | 中芯国际集成电路制造(上海)有限公司 | 2024-08-20 | — | — | CN | claimed |
| CN-103000386-A | Super hybrid capacitor and manufacturing method thereof | OCEANS KING LIGHTING SCIENCE | 2013-03-27 | — | — | CN | claimed |
| CN-1988357-A | High energy physics nuclear-magnetic power | ZHU XIAOLIANG (CN) | 2007-06-27 | — | — | CN | claimed |
| US-20060197148-A1 | TRENCH POWER MOSET AND METHOD FOR FABRICATING THE SAME | HSU HSIU-WEN | 2006-09-07 | — | — | US | claimed |
| US-20030113989-A1 | Method of fabricating a MOS transistor with a shallow junction | MACRONIX INTERNATIONAL CO. LTD. (TW) | 2003-06-19 | — | — | US | claimed |
| US-20030113960-A1 | Method of fabricating a MOS transistor with low gate depletion | MACRONIX INTERNATIONAL CO. LTD. (TW) | 2003-06-19 | — | — | US | claimed |
| CN-1074424-A | But the thermal treatment sputter-coated glasses series of strata of having improved | GUARDIAN INDUSTRIES (US) | 1993-07-21 | — | — | CN | claimed |
| EP-0362253-A1 | PROCESS FOR TREATING LIQUID METALS | THE UNIVERSITY OF TORONTO INNOVATIONS FOUNDATION (CA) | 1990-04-11 | — | — | EP | claimed |
| WO-1988009388-A1 | PROCESS FOR TREATING LIQUID METALS | THE UNIVERSITY OF TORONTO INNOVATIONS FOUNDATION (CA) | 1988-12-01 | — | — | WO | claimed |
| US-4619696-A | Additive for metallurgical liquids, and method and device for the preparation thereof | O.E.T. - METALCONSULT S.R.L. (IT) | 1986-10-28 | — | — | US | claimed |
| EP-0146830-A2 | Additive for metallurgical liquids, and method and device for the preparation thereof | O.E.T.-METALCONSULT S.r.l. (IT) | 1985-07-03 | — | — | EP | claimed |