SCHEMBL2516625

SCHEMBL2516625

O=[Sn].[GaH3].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16468626 0.91
SCHEMBL3972147 0.91
SCHEMBL5396071 0.91
SCHEMBL29182568 0.91
SCHEMBL15844827 0.91
SCHEMBL31373850 0.89
SCHEMBL230103 0.89
SCHEMBL50288 0.89
SCHEMBL3613828 0.89
SCHEMBL5402890 0.84

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1060 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260143674-A1 SEMICONDUCTOR DEVICES AND METHOD OF MANUFACTURING THE SAME SAMSUNG ELECTRONICS CO LTD (KR) 2026-05-21 US claimed
EP-4730944-A1 SEMICONDUCTOR DEVICE Samsung Electronics Co., Ltd. (KR) 2026-04-22 EP claimed
US-20260107441-A1 SEMICONDUCTOR DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-16 US claimed
EP-4718973-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF Samsung Electronics Co., Ltd. (KR) 2026-04-01 EP claimed
US-12593474-B2 Semiconductor device including channel structure comprising different compositions SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-31 US claimed
US-20260089949-A1 MEMORY DEVICE AND DRIVING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-03-26 US claimed
US-20260032964-A1 Thin Film Transistor, Method for Manufacturing the Same and Display Apparatus Comprising the Same LG DISPLAY CO LTD (KR) 2026-01-29 US claimed
EP-4686342-A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY APPARATUS COMPRISING THE SAME LG Display Co., Ltd. (KR) 2026-01-28 EP claimed
US-20260025968-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20260025973-A1 MEMORY DEVICE HAVING TIERS OF 2-TRANSISTOR MEMORY CELLS MICRON TECHNOLOGY INC (US) 2026-01-22 US claimed
US-20200111919-A1 DEVICES INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS AND ELECTRONIC SYSTEMS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed
US-20200111917-A1 DEVICES AND ELECTRONIC SYSTEMS INCLUDING VERTICAL TRANSISTORS, AND RELATED METHODS MICRON TECHNOLOGY, INC. 2020-04-09 US claimed
CN-110624542-A Method for catalyzing olefin and amine anti-Ma hydrogen amination reaction 北京化工大学 2019-12-31 CN claimed
CN-110518124-A Using ternary quaternary oxide as the perovskite solar battery and preparation method of electron transfer layer UNIV XIDIAN 2019-11-29 CN claimed
EP-3538883-A1 SENSITIVE FIELD EFFECT DEVICE AND MANUFACTURING METHOD THEREOF Alma Mater Studiorum - Università di Bologna (IT) 2019-09-18 EP claimed
US-20190277798-A1 SENSITIVE FIELD EFFECT DEVICE AND MANUFACTURING METHOD THEREOF UNIVERSIDADE NOVA DE LISBOA (PT) 2019-09-12 US claimed
CN-110073207-A Sensitive field effect device and its manufacturing method 博洛尼亚大学阿尔玛母校研究室 2019-07-30 CN claimed
WO-2018087787-A1 SENSITIVE FIELD EFFECT DEVICE AND MANUFACTURING METHOD THEREOF ALMA MATER STUDIORUM - UNIVERSITA' DI BOLOGNA (IT) 2018-05-17 WO claimed
US-7242039-B2 Semiconductor device HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) 2007-07-10 US claimed
US-20050199880-A1 Semiconductor device HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 2005-09-15 US claimed