Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA12 | O43570 | 4/20 | 0.94 |
| ▸ | CA1 | P00915 | 4/20 | 0.94 |
| ▸ | CA2 | P00918 | 4/20 | 0.94 |
| ▸ | CA7 | P43166 | 4/20 | 0.94 |
| ▸ | CA9 | Q16790 | 4/20 | 0.94 |
| ▸ | CA14 | Q9ULX7 | 4/20 | 0.94 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.94 |
| ▸ | MAPT | P10636 | 3/20 | 0.94 |
| ▸ | CA4 | P22748 | 3/20 | 0.94 |
| ▸ | CA6 | P23280 | 3/20 | 0.94 |
| ▸ | LMNA | P02545 | 3/20 | 0.94 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.94 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.94 |
| ▸ | FUT7 | Q11130 | 2/20 | 0.94 |
| ▸ | CA3 | P07451 | 2/20 | 0.94 |
| ▸ | CA5A | P35218 | 2/20 | 0.94 |
| ▸ | CA5B | Q9Y2D0 | 2/20 | 0.94 |
| ▸ | TP53 | P04637 | 1/20 | 0.94 |
| ▸ | SELL | P14151 | 1/20 | 0.94 |
| ▸ | HPGD | P15428 | 1/20 | 0.94 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Gallic Acid SCHEMBL4918056 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL678990 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL8088102 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL1845406 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL15012 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL30375631 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL29484566 | 0.97 | CA12 (1.00) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL438023 | 0.94 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL17748258 | 0.94 | CA12 (0.94) | CA12CA1CA2CA7CA9 | |
| Gallic Acid SCHEMBL2522451 | 0.94 | CA12 (0.94) | CA12CA1CA2CA7CA9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1734718-A | Compound semiconductor substrate and its production method | SOITEC SILICON ON INSULATOR (FR) | 2006-02-15 | — | — | CN | claimed |
| CN-1217381-C | Compound semiconductor substrate and method for manufacturing same | SOITEC SILICON ON INSULATOR (FR) | 2005-08-31 | — | — | CN | claimed |
| CN-1478295-A | Method for manufacturing a substrate, in particular for optical, electronic or optoelectronic devices, and substrate obtained thereby | S��O��I��TEC��Ե���Ϲ輼����˾ | 2004-02-25 | — | — | CN | claimed |
| WO-2024258867-A1 | SYSTEM AND METHOD FOR PRESERVING ALGAE | Macro Oceans Inc. (US) | 2024-12-19 | — | — | WO | disclosed |
| US-20240409878-A1 | SYSTEM AND METHOD FOR PRESERVING ALGAE | Macro Oceans Inc. (US) | 2024-12-12 | — | — | US | disclosed |
| CN-113677430-A | Composition comprising nanoparticles and method for producing nanoparticles | 埃克森美孚化学专利公司 | 2021-11-19 | — | — | CN | disclosed |
| US-8773628-B2 | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes | IDEMITSU KOSAN CO., LTD. (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8507111-B2 | Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes | IDEMITSU KOSAN CO., LTD. (JP) | 2013-08-13 | — | — | US | disclosed |
| CN-103121799-A | Sputtering target, transparent conductive film, thin film transistor substrate, method for manufacturing thin film transistor substrate, and liquid crystal display device | IDEMITSU KOSAN CO | 2013-05-29 | — | — | CN | disclosed |
| CN-1918672-B | Thin film transistor, thin film transistor substrate, liquid crystal display device, sputtering target, transparent conductive film, transparent electrode, and method for producing same | IDEMITSU KOSAN CO | 2012-10-03 | — | — | CN | disclosed |
| US-20110310322-A1 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR SUBSTRATE, PROCESSES FOR PRODUCING THE SAME, LIQUID CRYSTAL DISPLAY USING THE SAME, AND RELATED DEVICES AND PROCESSES; AND SPUTTERING TARGET, TRANSPARENT ELECTROCONDUCTIVE FILM FORMED BY USE OF THIS, TRANSPARENT ELECTRODE, AND RELATED DEVICES AND PROCESSES | INOUE KAZUYOSHI (JP) | 2011-12-22 | — | — | US | disclosed |
| US-7235462-B2 | Methods for fabricating a substrate | S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES (FR) | 2007-06-26 | — | — | US | disclosed |
| CN-1918672-A | Thin film transistor, thin film transistor substrate, method for producing thin film transistor substrate, liquid crystal display device using thin film transistor substrate, apparatus and method for producing thin film transistor substrate, sputtering target, transparent conductive film and transparent electrode formed by using sputtering target, and apparatus and method for producing thin film transistor substrate | IDEMITSU KOSAN CO (JP) | 2007-02-21 | — | — | CN | disclosed |
| EP-1724790-A1 | THIN-FILM TRANSISTOR AND THIN-FILM TRANSISTOR SUBSTRATE AND PRODUCTION METHODS FOR THEM AND LIQUID CRYSTAL DISPLAY UNIT USING THESE AND RELATED DEVICE AND METHOD, AND, SPUTTERING TARGET AND TRANSPARENT CONDUCTIVE FILM FORMED BY USING THIS AND TRANSPARENT ELECTRODE AND RELATED DEVICE AND METHOD | IDEMITSU KOSAN COMPANY LIMITED (JP) | 2006-11-22 | — | — | EP | disclosed |
| CN-1734718-A | Compound semiconductor substrate and its production method | SOITEC SILICON ON INSULATOR (FR) | 2006-02-15 | — | — | CN | disclosed |
| CN-1217381-C | Compound semiconductor substrate and method for manufacturing same | SOITEC SILICON ON INSULATOR (FR) | 2005-08-31 | — | — | CN | disclosed |
| US-20050026394-A1 | Methods for fabricating a substrate | S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A., | 2005-02-03 | — | — | US | disclosed |
| US-6794276-B2 | Methods for fabricating a substrate | S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. (FR) | 2004-09-21 | — | — | US | disclosed |
| CN-1478295-A | Method for manufacturing a substrate, in particular for optical, electronic or optoelectronic devices, and substrate obtained thereby | S��O��I��TEC��Ե���Ϲ輼����˾ | 2004-02-25 | — | — | CN | disclosed |
| US-20040029359-A1 | Methods for fabricating a substrate | S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. (FR) | 2004-02-12 | — | — | US | disclosed |