Dibromomethane

Dibromomethane

SCHEMBL2523229

BrCBr.CC(F)(F)F

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7602 0.78
SCHEMBL17035901 0.78
SCHEMBL64958 0.78
SCHEMBL3915773 0.76
SCHEMBL825624 0.76
Fluoride SCHEMBL23673680 0.72
Iodide SCHEMBL1198681 0.72
Fluoride SCHEMBL21834012 0.72
Water SCHEMBL8946260 0.72
Ammonia Solution, Strong SCHEMBL11136564 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8586660-B2 Dielectric paste composition, method of forming dielectric layer, dielectric layer, and device including the dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-11-19 US disclosed
EP-2378526-B1 Dielectric paste composition, method of forming dielectric layer, dielectric layer, and device including the dielectric layer SAMSUNG ELECTRONICS CO LTD (KR) 2013-03-13 EP disclosed
EP-2378526-A1 Dielectric paste composition, method of forming dielectric layer, dielectric layer, and device including the dielectric layer SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-10-19 EP disclosed
US-20110251319-A1 DIELECTRIC PASTE COMPOSITION, METHOD OF FORMING DIELECTRIC LAYER, DIELECTRIC LAYER, AND DEVICE INCLUDING THE DIELECTRIC LAYER SAMSUNG ELECTRONICS CO., LTD. (KR) 2011-10-13 US disclosed