SCHEMBL2524399

SCHEMBL2524399

[MgH2].[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28176327 0.82
SCHEMBL27766377 0.82
SCHEMBL27633031 0.82
SCHEMBL583853 0.82
SCHEMBL7160836 0.82
Water SCHEMBL583854 0.82
SCHEMBL27724400 0.82
SCHEMBL28306541 0.82
SCHEMBL28973289 0.82
SCHEMBL158268 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 739 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119706742-A Solar photocatalytic water splitting hydrogen production technical system integrating band gap complementary light capturing materials 中国科学院大连化学物理研究所 2025-03-28 CN claimed
CN-113228322-A Vertical pass FinFET in combination with resistive memory structures 国际商业机器公司 2021-08-06 CN claimed
US-10879311-B2 Vertical transport Fin field effect transistors combined with resistive memory structures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-12-29 US claimed
WO-2020161562-A1 VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS COMBINED WITH RESISTIVE MEMORY STRUCTURES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-08-13 WO claimed
US-20200258941-A1 VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS COMBINED WITH RESISTIVE MEMORY STRUCTURES INTERNATIONAL BUSINESS MACHINES CORPORATION 2020-08-13 US claimed
CN-106605311-A Reduction of barrier resistance area (RA) product and protection of perpendicular magnetic aeolotropism (PMA) applications 海德威科技公司 2017-04-26 CN claimed
CN-103503067-B Magnetic stack with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory 国际商业机器公司 2017-02-15 CN claimed
CN-104229890-A Preparation method of lanthanum magnesium tantalite powder UNIV BOHAI 2014-12-24 CN claimed
US-8866207-B2 Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-10-21 US claimed
CN-103503067-A Magnetic stack with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory IBM 2014-01-08 CN claimed
US-20130005052-A1 MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-01-03 US claimed
US-20130005051-A1 MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2013-01-03 US claimed
WO-2012148587-A1 MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY INTERNATIONAL BUSINESS MACHINES CORP. (US) 2012-11-01 WO claimed
US-20120267733-A1 MAGNETIC STACKS WITH PERPENDICULAR MAGNETIC ANISOTROPY FOR SPIN MOMENTUM TRANSFER MAGNETORESISTIVE RANDOM ACCESS MEMORY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-10-25 US claimed
US-20120241878-A1 MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-27 US claimed
WO-2012128891-A1 MAGNETIC TUNNEL JUNCTION WITH IRON DUSTING LAYER BETWEEN FREE LAYER AND TUNNEL BARRIER INTERNATIONAL BUSINESS MACHINES CORP. (US) 2012-09-27 WO claimed
CN-102534332-A Preparation method of tantalum-magnesium alloy wire CHUANXIN CAO 2012-07-04 CN claimed
JP-2149840-A None JP disclosed
CN-101180123-A Electrocatalyst for oxygen reduction with reduced platinum oxidation and dissolution rates BROOKHAVEN SCIENCE ASS LLC (US) 2008-05-14 CN disclosed
JP-H02149840-A MAGNESIUM TANTALUM OXIDE-CONTAINING X-RAY INTENSIFYING SCREEN EASTMAN KODAK CO 1990-06-08 JP disclosed