⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16046120 | 0.78 | — | — | |
| SCHEMBL28021079 | 0.71 | — | — | |
| SCHEMBL431750 | 0.71 | — | — | |
| SCHEMBL28460531 | 0.70 | — | — | |
| SCHEMBL21373909 | 0.70 | — | — | |
| SCHEMBL563276 | 0.70 | — | — | |
| SCHEMBL28610669 | 0.70 | — | — | |
| SCHEMBL19418621 | 0.70 | — | — | |
| SCHEMBL1411979 | 0.70 | — | — | |
| SCHEMBL19418595 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3186261-B1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC (US) | 2020-11-18 | — | — | EP | claimed |
| US-10590150-B2 | Preparation of fluorosilicon compounds | ARKEMA INC. (US) | 2020-03-17 | — | — | US | claimed |
| US-20180346492-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC (US) | 2018-12-06 | — | — | US | claimed |
| US-20170275307-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC. | 2017-09-28 | — | — | US | claimed |
| EP-3186261-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | Arkema, Inc. (US) | 2017-07-05 | — | — | EP | claimed |
| WO-2016032767-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC. (US) | 2016-03-03 | — | — | WO | claimed |
| US-8039049-B2 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-10-18 | — | — | US | claimed |
| US-7405168-B2 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMITED (JP) | 2008-07-29 | — | — | US | claimed |
| US-20080076262-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2008-03-27 | — | — | US | claimed |
| US-7345000-B2 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2008-03-18 | — | — | US | claimed |
| WO-2007040834-A2 | PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| WO-2007040816-A2 | TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| WO-2007040856-A2 | PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | claimed |
| US-20070077782-A1 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2007-04-05 | — | — | US | claimed |
| US-20070077781-A1 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMTED (JP) | 2007-04-05 | — | — | US | claimed |
| WO-2006091264-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2006-08-31 | — | — | WO | claimed |
| US-20050215072-A1 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2005-09-29 | — | — | US | claimed |
| US-20040035791-A1 | Formation of hydrophilic sites in partially silylated micelle templated silica | UNIVERSITE LAVAL (CA) | 2004-02-26 | — | — | US | claimed |
| WO-2002016267-A1 | FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA | UNIVERSITE LAVAL (CA) | 2002-02-28 | — | — | WO | claimed |
| EP-3186261-B1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC (US) | 2020-11-18 | — | — | EP | disclosed |
| US-10590150-B2 | Preparation of fluorosilicon compounds | ARKEMA INC. (US) | 2020-03-17 | — | — | US | disclosed |
| US-20180346492-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC (US) | 2018-12-06 | — | — | US | disclosed |
| US-20170275307-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC. | 2017-09-28 | — | — | US | disclosed |
| EP-3186261-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | Arkema, Inc. (US) | 2017-07-05 | — | — | EP | disclosed |
| EP-1782436-B1 | METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE | NOVINIUM INC (US) | 2017-05-31 | — | — | EP | disclosed |
| WO-2016032767-A1 | PREPARATION OF FLUOROSILICON COMPOUNDS | ARKEMA INC. (US) | 2016-03-03 | — | — | WO | disclosed |
| US-8656586-B2 | Method for treating electrical cable at sustained elevated pressure | NOVINIUM, INC. (US) | 2014-02-25 | — | — | US | disclosed |
| EP-1744866-B1 | METHOD FOR SELECTING FORMULATIONS TO TREAT ELECTRICAL CABLES | NOVINIUM INC (US) | 2012-08-08 | — | — | EP | disclosed |
| US-8205326-B2 | Method for treating electrical cable at sustained elevated pressure | NOVINIUM, INC. (US) | 2012-06-26 | — | — | US | disclosed |
| US-20120102729-A1 | METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE | NOVINIUM, INC. (US) | 2012-05-03 | — | — | US | disclosed |
| US-8039049-B2 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-10-18 | — | — | US | disclosed |
| US-7901743-B2 | Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2011-03-08 | — | — | US | disclosed |
| US-20100095521-A1 | METHOD FOR TREATING ELECTRICAL CABLE AT SUSTAINED ELEVATED PRESSURE | NOVINIUM, INC. (US) | 2010-04-22 | — | — | US | disclosed |
| US-7615247-B2 | Promoting transport of dielectric enhancing fluid into polymeric insulation; utilizing residual injection pressure to expand interstitial void volume along entire length of treatment segment | NOVINIUM, INC. (US) | 2009-11-10 | — | — | US | disclosed |
| US-7611748-B2 | Method for selecting formulations to treat electrical cables | NOVINIUM, INC. (US) | 2009-11-03 | — | — | US | disclosed |
| EP-1882010-B1 | METHOD FOR PRODUCING SILICONE MATERIALS CONTAINING HIGHLY DISPERSED FILLING MATERIALS | WACKER CHEMIE AG (DE) | 2009-01-14 | — | — | EP | disclosed |
| US-20080188614-A1 | Process For Producing Silicone Compositions Comprising Finely Divided Fillers | WACKER CHEMIE AG (DE) | 2008-08-07 | — | — | US | disclosed |
| US-7405168-B2 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMITED (JP) | 2008-07-29 | — | — | US | disclosed |
| US-20080076262-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2008-03-27 | — | — | US | disclosed |
| US-7345000-B2 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2008-03-18 | — | — | US | disclosed |
| WO-2007040834-A2 | PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | disclosed |
| WO-2007040856-A2 | PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | disclosed |
| WO-2007040816-A2 | TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM | TOKYO ELECTRON LIMITED (JP) | 2007-04-12 | — | — | WO | disclosed |
| US-20070077782-A1 | Treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070077353-A1 | Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system | TOKYO ELECTRON LIMITED (JP) | 2007-04-05 | — | — | US | disclosed |
| US-20070077781-A1 | Plural treatment step process for treating dielectric films | TOKYO ELECTRON LIMTED (JP) | 2007-04-05 | — | — | US | disclosed |
| WO-2006091264-A1 | METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM | TOKYO ELECTRON LIMITED (JP) | 2006-08-31 | — | — | WO | disclosed |
| US-20050215072-A1 | Method and system for treating a dielectric film | TOKYO ELECTRON LIMITED (JP) | 2005-09-29 | — | — | US | disclosed |
| US-20050192708-A1 | Method for selecting formulations to treat electrical cables | NOVINIUM, INC. (US) | 2005-09-01 | — | — | US | disclosed |
| US-20050189130-A1 | Method for treating electrical cable at sustained elevated pressure | NOVINIUM, INC. (US) | 2005-09-01 | — | — | US | disclosed |
| US-20040035791-A1 | Formation of hydrophilic sites in partially silylated micelle templated silica | UNIVERSITE LAVAL (CA) | 2004-02-26 | — | — | US | disclosed |
| WO-2002016267-A1 | FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA | UNIVERSITE LAVAL (CA) | 2002-02-28 | — | — | WO | disclosed |
| WO-2002016267-A1 | FORMATION OF HYDROPHILIC SITES IN PARTIALLY SILYLATED MICELLE TEMPLATED SILICA | UNIVERSITE LAVAL (CA) | 2002-02-28 | — | — | WO | disclosed |