Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDR | P35968 | 5/20 | 0.45 |
| ▸ | SMPD1 | P17405 | 4/20 | 0.38 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | PTGS1 | P23219 | 3/20 | 0.35 |
| ▸ | PTGS2 | P35354 | 3/20 | 0.35 |
| ▸ | MGLL | Q99685 | 2/20 | 0.35 |
| ▸ | FAAH | O00519 | 1/20 | 0.35 |
| ▸ | GBA1 | P04062 | 4/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17943862 | 1.00 | KDR (0.45) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL25414997 | 1.00 | KDR (0.45) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL8848856 | 1.00 | KDR (0.45) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL25416277 | 1.00 | KDR (0.45) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL17943854 | 0.98 | KDR (0.43) | KDRSMPD1KDM4ELMNA | |
| SCHEMBL25416261 | 0.81 | KDR (0.44) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL25413523 | 0.81 | KDR (0.44) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL25415712 | 0.81 | KDR (0.44) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL25414778 | 0.81 | KDR (0.44) | KDRSMPD1KDM4ELMNAPTGS1 | |
| SCHEMBL7134464 | 0.79 | KDR (0.45) | KDRSMPD1PTGS1PTGS2MGLL |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250154410-A1 | COMPOSITION, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND ETCHING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-05-15 | — | — | US | disclosed |
| EP-4485506-A1 | COMPOSITION, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND ETCHING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-01-01 | — | — | EP | disclosed |
| CN-118715596-A | Composition, and method for manufacturing and etching semiconductor substrate using same | 三菱瓦斯化学株式会社 | 2024-09-27 | — | — | CN | disclosed |
| WO-2023163002-A1 | COMPOSITION, AND SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND ETCHING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-08-31 | — | — | WO | disclosed |