SCHEMBL2573263

SCHEMBL2573263

CCCCCCCCOc1ccc(I)cc1.CCCCCCCCOc1ccc(I)cc1.O=C(O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O

nearest known ligand 0.46

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.46
TSHR P16473 1/20 0.46
PLA2G4B P0C869 9/20 0.45
RARB P10826 3/20 0.43
PLA2G4A P47712 1/20 0.42
CA12 O43570 2/20 0.41
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CA9 Q16790 2/20 0.41
NR5A1 Q13285 1/20 0.41
S1PR1 P21453 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3747621 0.97 TP53 (0.47) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL3740933 0.92 NR5A1 (0.48) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL3746859 0.90 NR5A1 (0.48) TP53TSHRPLA2G4BRARBPLA2G4A
Trifluoromethanesulfonic Acid SCHEMBL29504029 0.83 NR5A1 (0.51) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL3416686 0.80 RARB (0.43) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL3421587 0.76 RARB (0.43) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL4127155 0.76 NR5A1 (0.58) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL4118653 0.75 NR5A1 (0.56) TP53TSHRPLA2G4BRARBPLA2G4A
SCHEMBL3872699 0.74 PDK2 (0.41) TP53TSHRPLA2G4BRARBNR5A1
SCHEMBL2437076 0.74 NR5A1 (0.42) TP53TSHRPLA2G4BRARBPLA2G4A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2384457-A2 COATING COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2011-11-09 EP disclosed
US-7833693-B2 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity AZ ELECTRONIC MATERIALS USA CORP. 2010-11-16 US disclosed
WO-2010055406-A2 COATING COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-05-20 WO disclosed
US-7521170-B2 Photoactive compounds AZ ELECTRONIC MATERIALS USA CORP. (US) 2009-04-21 US disclosed
US-20090087782-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2009-04-02 US disclosed
EP-1915360-A2 PHOTOACTIVE COMPOUNDS AZ Electronic Materials USA Corp. (US) 2008-04-30 EP disclosed
WO-2007007175-A2 PHOTOACTIVE COMPOUNDS AZ ELECTRONIC MATERIAL USA CORP. (DE) 2007-01-18 WO disclosed
US-20070015084-A1 Iodonium or sulfonium di-(tetrafluoroethyl sulfonate) ether acid generators; imaging negative and positive patterns in semiconductors and photoresists; microlithography; high photosensitivity MERCK PATENT GMBH (DE) 2007-01-18 US disclosed