SCHEMBL2582286

SCHEMBL2582286

[Al+3].[Al+3].[Cu+2].[Cu+2].[Ga+3].[Ga+3].[In+3].[In+3].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2].[Se-2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2589353 0.91
SCHEMBL29743235 0.89
SCHEMBL227540 0.89
SCHEMBL24005 0.89
SCHEMBL13720823 0.89
SCHEMBL10317932 0.80
SCHEMBL2578773 0.80
SCHEMBL442846 0.80
Hydrogen Sulfide SCHEMBL18280707 0.80
SCHEMBL5012702 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160155886-A1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC (US) 2016-06-02 US disclosed
US-9356177-B2 Method of manufacture of chalcogenide-based photovoltaic cells DOW GLOBAL TECHNOLOGIES LLC (US) 2016-05-31 US disclosed
US-20160149069-A1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC (US) 2016-05-26 US disclosed
EP-2791072-B1 METHOD OF FORMING OPTOELECTRONIC DEVICE HAVING A STABILIZED METAL OXIDE LAYER DOW GLOBAL TECHNOLOGIES LLC (US) 2016-05-11 EP disclosed
EP-2564434-B1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC (US) 2016-01-13 EP disclosed
EP-2791072-A2 METHOD OF FORMING OPTOELECTRONIC DEVICE HAVING A STABILIZED METAL OXIDE LAYER Dow Global Technologies LLC (US) 2014-10-22 EP disclosed
US-20140290738-A1 METHOD OF FORMING OPTOELECTRONIC DEVICE HAVING A STABILIZED METAL OXIDE LAYER DOW GLOBAL TECHNOLOGIES LLC (US) 2014-10-02 US disclosed
WO-2013090131-A2 METHOD OF FORMING OPTOELECTRONIC DEVICE HAVING A STABILIZED METAL OXIDE LAYER DOW GLOBAL TECHNOLOGIES LLC (US) 2013-06-20 WO disclosed
EP-2564434-A2 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS Dow Global Technologies LLC (US) 2013-03-06 EP disclosed
US-20110277840-A1 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC 2011-11-17 US disclosed
WO-2011137216-A2 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS DOW GLOBAL TECHNOLOGIES LLC (US) 2011-11-03 WO disclosed