⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31318349 | 0.87 | — | — | |
| SCHEMBL31134009 | 0.87 | — | — | |
| SCHEMBL35412971 | 0.87 | — | — | |
| SCHEMBL10617227 | 0.87 | — | — | |
| SCHEMBL7495955 | 0.87 | — | — | |
| SCHEMBL31258432 | 0.87 | — | — | |
| SCHEMBL82088 | 0.82 | — | — | |
| SCHEMBL2293025 | 0.82 | — | — | |
| SCHEMBL9132777 | 0.82 | — | — | |
| SCHEMBL4410587 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 40 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115172470-B | Absorption diode device structure with reverse amplification function and manufacturing method | 江苏新顺微电子股份有限公司 | 2023-09-26 | — | — | CN | claimed |
| CN-115172470-A | Absorption diode device structure with reverse amplification function and manufacturing method | 江苏新顺微电子股份有限公司 | 2022-10-11 | — | — | CN | claimed |
| CN-108930024-B | Electronic equipment shell and electronic equipment | 北京小米移动软件有限公司 | 2020-08-07 | — | — | CN | claimed |
| CN-108930024-A | The shell and electronic equipment of electronic equipment | 北京小米移动软件有限公司 | 2018-12-04 | — | — | CN | claimed |
| JP-56015047-A | — | — | None | — | — | JP | disclosed |
| US-12247279-B2 | Method for preparing a conductive, transparent and flexible membrane | CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (FR) | 2025-03-11 | — | — | US | disclosed |
| CN-118676552-B | Composite pole, battery cover plate assembly and battery | 蜂巢能源科技股份有限公司 | 2024-10-25 | — | — | CN | disclosed |
| CN-118676552-A | Composite pole, battery cover plate assembly and battery | 蜂巢能源科技股份有限公司 | 2024-09-20 | — | — | CN | disclosed |
| CN-115172470-B | Absorption diode device structure with reverse amplification function and manufacturing method | 江苏新顺微电子股份有限公司 | 2023-09-26 | — | — | CN | disclosed |
| CN-115172470-A | Absorption diode device structure with reverse amplification function and manufacturing method | 江苏新顺微电子股份有限公司 | 2022-10-11 | — | — | CN | disclosed |
| US-20220162736-A1 | METHOD FOR PREPARING A CONDUCTIVE, TRANSPARENT AND FLEXIBLE MEMBRANE | NANTES UNIVERSITE (FR) | 2022-05-26 | — | — | US | disclosed |
| US-11332587-B2 | Window for display device and display device including the window | SAMSUNG DISPLAY CO., LTD. (KR) | 2022-05-17 | — | — | US | disclosed |
| US-20090239332-A1 | Bifacial Cell With Extruded Gridline Metallization | PALO ALTO RESEARCH CENTER INCORPORATED (US) | 2009-09-24 | — | — | US | disclosed |
| US-20090174317-A1 | Display device having a transparent protective display unit | SAMSUNG MOBILE DISPLAY CO., LTD., A CORPORATION CHARTERED IN AND EXISTING UNDER THE LAWS OF THE REPUBLIC OF KOREA (KR) | 2009-07-09 | — | — | US | disclosed |
| US-20070107773-A1 | Bifacial cell with extruded gridline metallization | PALO ALTO RESEARCH CENTER INCORPORATED | 2007-05-17 | — | — | US | disclosed |
| US-5866951-A | Hybrid circuit with an electrically conductive adhesive | ROBERT BOSCH GMBH (DE) | 1999-02-02 | — | — | US | disclosed |
| US-5451544-A | Method of manufacturing a back contact for semiconductor die | INTERNATIONAL RECTIFIER CORPORATION (US) | 1995-09-19 | — | — | US | disclosed |
| US-4769280-A | RESIN MATRIX LOADED WITH ELECTROCONDUCTIVE PARTICLES OF ALUMINUM, TIN AND SILVER | CHOMERICS, INC. (US) | 1988-09-06 | — | — | US | disclosed |
| US-4434541-A | DISPERSING ELECTROCONDUCTIVE PARTICLES IN BINDER; GASKETS, CAULKING | CHOMERICS, INC. (US) | 1984-03-06 | — | — | US | disclosed |
| JP-S5615047-A | SEMICONDUCTOR DEVICE | HITACHI LTD | 1981-02-13 | — | — | JP | disclosed |