Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GAA | P10253 | 3/20 | 0.52 |
| ▸ | MGAM | O43451 | 2/20 | 0.52 |
| ▸ | SI | P14410 | 2/20 | 0.52 |
| ▸ | MGAM2 | Q2M2H8 | 2/20 | 0.52 |
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.39 |
| ▸ | TRPA1 | O75762 | 1/20 | 0.39 |
| ▸ | LMNA | P02545 | 2/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | MAPT | P10636 | 3/20 | 0.35 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.34 |
| ▸ | PKM | P14618 | 2/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | MEN1 | O00255 | 2/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.33 |
| ▸ | THRB | P10828 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27812701 | 1.00 | GAA (0.52) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL487722 | 0.89 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL27734875 | 0.89 | GAA (0.48) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL2591540 | 0.88 | GAA (0.61) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL1697722 | 0.86 | GAA (0.58) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL28369655 | 0.83 | GAA (0.67) | GAAMGAMSIMGAM2ALDH1A1 | |
| SCHEMBL1331371 | 0.83 | — | — | |
| SCHEMBL1330988 | 0.83 | — | — | |
| SCHEMBL1331762 | 0.83 | — | — | |
| SCHEMBL1331782 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20220155688-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2022-05-19 | — | — | US | disclosed |
| US-20210124266-A1 | PRIMER FOR SEMICONDUCTOR SUBSTRATE AND METHOD FOR FORMING A PATTERN | NISSAN CHEMICAL CORPORATION (JP) | 2021-04-29 | — | — | US | disclosed |
| US-10838303-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having carbonate skeleton | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-11-17 | — | — | US | disclosed |
| US-20200225584-A1 | ALKALINE DEVELOPER SOLUABLE SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2020-07-16 | — | — | US | disclosed |
| US-10613440-B2 | Silicon-containing EUV resist underlayer film-forming composition containing onium sulfonate | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-04-07 | — | — | US | disclosed |
| US-10558119-B2 | Composition for coating resist pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2020-02-11 | — | — | US | disclosed |
| US-10372040-B2 | Resist underlayer film forming composition for lithography containing hydrolyzable silane having halogen-containing carboxylic acid amide group | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2019-08-06 | — | — | US | disclosed |
| US-20190185707-A1 | ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-06-20 | — | — | US | disclosed |
| US-10139729-B2 | Coating composition for pattern reversal on soc pattern | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-11-27 | — | — | US | disclosed |
| EP-1298176-A2 | Stacked film insulating film and substrate for semiconductor | JSR Corporation (JP) | 2003-04-02 | — | — | EP | disclosed |
| US-20030059550-A1 | Method of film formation, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| US-20030059628-A1 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR CORPORATION (JP) | 2003-03-27 | — | — | US | disclosed |
| EP-1296365-A2 | Method of film formation, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| EP-1295924-A2 | Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor | JSR Corporation (JP) | 2003-03-26 | — | — | EP | disclosed |
| US-20030008155-A1 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2003-01-09 | — | — | US | disclosed |
| EP-1267395-A2 | Method for the formation of silica film, silica film, insulating film, and semiconductor device | JSR Corporation (JP) | 2002-12-18 | — | — | EP | disclosed |
| US-6472079-B2 | PRODUCT OF HYDROLYSIS AND CONDENSATION OF AN ORGANOSILICON COMPOUND; 1A OR 2A COMPOUND, ESPECIALLY CARBOXYLIC SALT; SOLVENT; EXCELLENT CRACKING RESISTANCE AFTER A PCT (PRESSURE COOKER TEST). | JSR CORPORATION (JP) | 2002-10-29 | — | — | US | disclosed |
| US-20020045693-A1 | Composition for film formation, method of film formation and silica-based film | JSR CORPORATION (JP) | 2002-04-18 | — | — | US | disclosed |
| EP-1148105-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-10-24 | — | — | EP | disclosed |