⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16632113 | 0.87 | — | — | |
| SCHEMBL10578755 | 0.82 | — | — | |
| SCHEMBL16037 | 0.82 | — | — | |
| SCHEMBL8849452 | 0.82 | — | — | |
| SCHEMBL4865213 | 0.82 | — | — | |
| SCHEMBL8844858 | 0.82 | — | — | |
| SCHEMBL7973038 | 0.82 | — | — | |
| SCHEMBL35987 | 0.82 | — | — | |
| SCHEMBL18886767 | 0.82 | — | — | |
| SCHEMBL1238193 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 531 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115938925-A | Preparation method of metal gate structure | 联合微电子中心有限责任公司 | 2023-04-07 | — | — | CN | claimed |
| US-20230074307-A1 | SUBSTRATE HOLDING UNIT AND SUBSTRATE PROCESSING APPARATUS | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2023-03-09 | — | — | US | claimed |
| CN-109037317-B | Ferroelectric memory device | 爱思开海力士有限公司 | 2021-09-10 | — | — | CN | claimed |
| US-10475924-B2 | Ferroelectric memory devices | SK Hynix Inc. (KR) | 2019-11-12 | — | — | US | claimed |
| US-20180358471-A1 | FERROELECTRIC MEMORY DEVICES | SK Hynix Inc. (KR) | 2018-12-13 | — | — | US | claimed |
| US-9466660-B2 | Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures | MICRON TECHNOLOGY, INC. (US) | 2016-10-11 | — | — | US | claimed |
| US-9263539-B2 | Thin-film transistor and fabrication method thereof, array substrate and display device | BOE TECHNOLOGY GROUP CO., LTD (CN) | 2016-02-16 | — | — | US | claimed |
| CN-104829984-A | Teflon-based low-heat resistance heat radiation material for LED light source and preparation method thereof | ANHUI BO CHANG ELECTRONIC POLYTRON TECHNOLOGIES INC | 2015-08-12 | — | — | CN | claimed |
| US-20150194498-A1 | THIN-FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE | BOE TECHNOLOGY GROUP CO., LTD. (CN) | 2015-07-09 | — | — | US | claimed |
| US-20150187841-A1 | Method of forming current-programmable inline resistor | INTERMOLECULAR INC. (US) | 2015-07-02 | — | — | US | claimed |
| US-20060148125-A1 | Phase changable memory device structures | HORII HIDEKI | 2006-07-06 | — | — | US | claimed |
| US-20060118913-A1 | Phase changeable memory cells and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. | 2006-06-08 | — | — | US | claimed |
| US-7037749-B2 | Methods for forming phase changeable memory devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-05-02 | — | — | US | claimed |
| US-20060076641-A1 | Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devices | SAMSUNG ELECTRONICS CO., LTD. | 2006-04-13 | — | — | US | claimed |
| US-20060035429-A1 | Methods of forming phase-change random access memories including a confined contact hole and integrated circuit devices including the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-02-16 | — | — | US | claimed |
| US-20050185444-A1 | Phase-changeable memory device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-08-25 | — | — | US | claimed |
| US-20050002227-A1 | Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-01-06 | — | — | US | claimed |
| US-20040251551-A1 | Phase changeable memory devices including carbon nano tubes and methods for forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-12-16 | — | — | US | claimed |
| US-20040183107-A1 | Phase changable memory device structures and related methods | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-09-23 | — | — | US | claimed |
| US-20040165422-A1 | Phase changeable memory devices and methods for fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2004-08-26 | — | — | US | claimed |