⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29786234 | 0.89 | — | — | |
| SCHEMBL30792859 | 0.89 | — | — | |
| SCHEMBL72245 | 0.87 | — | — | |
| SCHEMBL30939721 | 0.75 | — | — | |
| SCHEMBL4019212 | 0.75 | — | — | |
| SCHEMBL23235925 | 0.75 | — | — | |
| SCHEMBL17159963 | 0.75 | — | — | |
| SCHEMBL15477497 | 0.75 | — | — | |
| Ammonia Solution, Strong SCHEMBL4802035 | 0.75 | — | — | |
| SCHEMBL31074865 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 134 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111969035-B | Transistor device and application and preparation thereof | 山西师范大学 | 2024-03-29 | — | — | CN | claimed |
| CN-115747757-A | One-dimensional layered bismuth telluride oxide ferroelectric nano-belt and preparation method and application thereof | 中国科学院苏州纳米技术与纳米仿生研究所 | 2023-03-07 | — | — | CN | claimed |
| US-20200266308-A1 | SOLAR CELL | CHANGZHOU FUSION NEW MATERIAL CO. LTD (CN) | 2020-08-20 | — | — | US | claimed |
| US-10665733-B2 | Composition for forming solar cell electrode and electrode prepared using the same | SAMSUNG SDI CO., LTD. (KR) | 2020-05-26 | — | — | US | claimed |
| US-10439080-B2 | Composition for forming solar cell electrode and electrode prepared using the same | SAMSUNG SDI CO., LTD. (KR) | 2019-10-08 | — | — | US | claimed |
| US-20180226525-A1 | COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME | CHANGZHOU FUSION NEW MATERIAL CO. LTD (CN) | 2018-08-09 | — | — | US | claimed |
| CN-108022983-A | For the finger electrode of solar cell and its manufacture method | 三星SDI株式会社 | 2018-05-11 | — | — | CN | claimed |
| CN-108022670-A | For forming the composition of solar cel electrode and the electrode using its preparation | 三星SDI株式会社 | 2018-05-11 | — | — | CN | claimed |
| CN-103443025-B | Thick film paste comprising bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices | E.I.内穆尔杜邦公司 | 2018-05-08 | — | — | CN | claimed |
| US-20180122965-A1 | COMPOSITION FOR FORMING SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME | CHANGZHOU FUSION NEW MATERIAL CO. LTD (CN) | 2018-05-03 | — | — | US | claimed |
| US-20130099178-A1 | THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E I DU PONT DE NEMOURS AND COMPANY (US) | 2013-04-25 | — | — | US | claimed |
| EP-2584566-A1 | Thick film silver paste and its use in the manufacture of semiconductor devices | E. I. du Pont de Nemours and Company (US) | 2013-04-24 | — | — | EP | claimed |
| CN-103065700-A | Thick film silver paste and use thereof in manufacture of semiconductor device | DU PONT | 2013-04-24 | — | — | CN | claimed |
| US-20130092051-A1 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2013-04-18 | — | — | US | claimed |
| US-20130092884-A1 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E.I. DU PONT DE NEMOURS AND COMPANY (US) | 2013-04-18 | — | — | US | claimed |
| WO-2013025648-A1 | CONDUCTIVE COMPOSITIONS CONTAINING Li2RuO3 AND ION-EXCHANGED Li2RuO3 AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2013-02-21 | — | — | WO | claimed |
| US-20130043440-A1 | CONDUCTIVE COMPOSITIONS CONTAINING Li2RuO3 AND ION-EXCHANGED Li2RuO3 AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E I DU PONT DE NEMOURS AND COMPANY (US) | 2013-02-21 | — | — | US | claimed |
| WO-2012158905-A1 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2012-11-22 | — | — | WO | claimed |
| WO-2012138935-A2 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2012-10-11 | — | — | WO | claimed |
| WO-2012138930-A2 | THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES | E. I. DU PONT DE NEMOURS AND COMPANY (US) | 2012-10-11 | — | — | WO | claimed |