SCHEMBL2618657

SCHEMBL2618657

OC(CC1CC2CC1C1C3CCC(C3)C21)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12193709 0.84 — —
SCHEMBL14086280 0.83 — —
SCHEMBL14085984 0.81 — —
SCHEMBL2618644 0.81 — —
SCHEMBL12836391 0.80 — —
SCHEMBL18177009 0.80 — —
SCHEMBL13642076 0.79 — —
SCHEMBL12295180 0.79 — —
SCHEMBL13305425 0.78 — —
SCHEMBL12308230 0.77 — —

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 214 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12517429-B2 Radiation-sensitive resin composition and method for forming pattern JSR CORPORATION (JP) 2026-01-06 — — US disclosed
US-20250377590-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2025-12-11 — — US disclosed
US-20250321484-A1 METHOD FOR FORMING RESIST PATTERN AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2025-10-16 — — US disclosed
US-12422748-B2 Radiation-sensitive resin composition and method for forming resist pattern JSR CORPORATION (JP) 2025-09-23 — — US disclosed
US-12265331-B2 Radiation-sensitive resin composition and method for forming resist pattern JSR CORPORATION (JP) 2025-04-01 — — US disclosed
US-12092957-B2 Radiation-sensitive resin composition, method for forming resist pattern and compound JSR CORPORATION (JP) 2024-09-17 — — US disclosed
US-11966160-B2 Radiation-sensitive resin composition and method for forming pattern JSR CORPORATION (JP) 2024-04-23 — — US disclosed
US-20230393469-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2023-12-07 — — US disclosed
US-20230341772-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-10-26 — — US disclosed
US-11747725-B2 Radiation-sensitive resin composition and method for forming resist pattern JSR CORPORATION (JP) 2023-09-05 — — US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 — — US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 — — US disclosed
US-7192685-B2 Positive resist composition and method of forming resist pattern using the same. FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 — — US disclosed
US-7192685-B2 Positive resist composition and method of forming resist pattern using the same. FUJI PHOTO FILM CO., LTD. (JP) 2007-03-20 — — US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 — — US disclosed
US-20070054214-A1 Acid generators, sulfonic acids, sulfonyl halides, and radiation sensitive resin compositions JSR CORPORATION (JP) 2007-03-08 — — US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 — — US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 — — US disclosed
EP-1748318-A2 Chemical amplification-type resist composition and production process thereof Fuji Photo Film Co., Ltd. (JP) 2007-01-31 — — EP disclosed
US-7157206-B2 Resin containing an acid-decomposable group such as bis(trifluoromethyl)methanol group, to generate alkali-soluble group, and acid generators selected from fluorine-substituted or non-fluorine substituted aromatic or aliphatic carboxylic acid generators or sulfonic acid generators; microlithography FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 — — US disclosed
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