⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL254015 | 1.00 | — | — | |
| SCHEMBL13595149 | 1.00 | — | — | |
| SCHEMBL12651657 | 1.00 | — | — | |
| SCHEMBL13595152 | 1.00 | — | — | |
| SCHEMBL463152 | 1.00 | — | — | |
| SCHEMBL13403364 | 1.00 | — | — | |
| SCHEMBL12693546 | 1.00 | — | — | |
| SCHEMBL13890383 | 1.00 | — | — | |
| SCHEMBL91118 | 1.00 | — | — | |
| SCHEMBL10022990 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8304320-B2 | Configuration and fabrication of semiconductor structure in which source and drain extensions of field-effect transistor are defined with different dopants | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2012-11-06 | — | — | US | disclosed |
| US-8304835-B2 | Configuration and fabrication of semiconductor structure using empty and filled wells | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2012-11-06 | — | — | US | disclosed |
| US-8253208-B1 | Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2012-08-28 | — | — | US | disclosed |
| US-20120184077-A1 | Configuration and Fabrication of Semiconductor Structure in Which Source and Drain Extensions of Field-effect Transistor Are Defined with Different Dopants | BAHL SANDEEP R (US) | 2012-07-19 | — | — | US | disclosed |
| US-8163619-B2 | Fabrication of semiconductor structure having asymmetric field-effect transistor with tailored pocket portion along source/drain zone | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2012-04-24 | — | — | US | disclosed |
| US-7968921-B2 | Asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2011-06-28 | — | — | US | disclosed |
| US-7838369-B2 | Fabrication of semiconductor architecture having field-effect transistors especially suitable for analog applications | NATIONAL SEMICONDUCTOR CORPORATION (US) | 2010-11-23 | — | — | US | disclosed |
| US-20100244131-A1 | Structure and fabrication of asymmetric field-effect transistor having asymmetric channel zone and differently configured source/drain extensions | NATIONAL SEMICONDUCTOR CORPORATION | 2010-09-30 | — | — | US | disclosed |
| US-20100244130-A1 | Structure and fabrication of field-effect transistor using empty well in combination with source/drain extensions or/and halo pocket | NATIONAL SEMICONDUCTOR CORPORATION | 2010-09-30 | — | — | US | disclosed |
| US-20100244148-A1 | Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profile | NATIONAL SEMICONDUCTOR CORPORATION | 2010-09-30 | — | — | US | disclosed |
| US-20100244128-A1 | Configuration and fabrication of semiconductor structure using empty and filled wells | NATIONAL SEMICONDUCTOR CORPORATION | 2010-09-30 | — | — | US | disclosed |
| US-7684160-B1 | Magnetoresistive structure having a novel specular and barrier layer combination | WESTERN DIGITAL (FREMONT), LLC (US) | 2010-03-23 | — | — | US | disclosed |