⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29396286 | 1.00 | — | — | |
| SCHEMBL1901018 | 0.82 | — | — | |
| SCHEMBL29911368 | 0.82 | — | — | |
| SCHEMBL203667 | 0.82 | — | — | |
| SCHEMBL10937772 | 0.82 | — | — | |
| SCHEMBL29911313 | 0.82 | — | — | |
| SCHEMBL2422998 | 0.71 | — | — | |
| SCHEMBL7717809 | 0.71 | — | — | |
| SCHEMBL2024615 | 0.71 | — | — | |
| SCHEMBL10608169 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 309 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250212395-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-06-26 | — | — | US | claimed |
| EP-4576974-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2025-06-25 | — | — | EP | claimed |
| CN-113050361-B | Method for manufacturing semiconductor element | 台湾积体电路制造股份有限公司 | 2025-02-28 | — | — | CN | claimed |
| US-11740547-B2 | Method of manufacturing extreme ultraviolet mask with reduced wafer neighboring effect | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-29 | — | — | US | claimed |
| US-11561464-B2 | EUV masks to prevent carbon contamination | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-24 | — | — | US | claimed |
| US-20220082928-A1 | EUV MASKS TO PREVENT CARBON CONTAMINATION | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-03-17 | — | — | US | claimed |
| CN-113050361-A | Method for manufacturing semiconductor element | 台湾积体电路制造股份有限公司 | 2021-06-29 | — | — | CN | claimed |
| CN-112794373-A | Tantalum-boron co-doped ternary cathode material and preparation method thereof | 格林美股份有限公司 | 2021-05-14 | — | — | CN | claimed |
| US-10996553-B2 | Extreme ultraviolet mask with reduced wafer neighboring effect and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-05-04 | — | — | US | claimed |
| CN-111606554-A | Amorphous alloy glass compression molding die, manufacturing method and application thereof | 中国科学院物理研究所 | 2020-09-01 | — | — | CN | claimed |
| US-20140065521-A1 | METHOD FOR MASK FABRICATION AND REPAIR | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-03-06 | — | — | US | claimed |
| US-20130189608-A1 | EXTREME ULTRA VIOLET (EUV) MASK | SK Hynix Inc. (KR) | 2013-07-25 | — | — | US | claimed |
| US-8158305-B2 | Photomask for extreme ultraviolet lithography and method for fabricating the same | HYNIX SEMICONDUCTOR INC. (KR) | 2012-04-17 | — | — | US | claimed |
| US-20100304277-A1 | Photomask for Extreme Ultraviolet Lithography and Method for Fabricating the Same | HYNIX SEMICONDUCTOR INC. (KR) | 2010-12-02 | — | — | US | claimed |
| US-7771894-B2 | Photomask having self-masking layer and methods of etching same | APPLIED MATERIALS, INC. (US) | 2010-08-10 | — | — | US | claimed |
| US-7684161-B2 | Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence | EVERSPIN TECHNOLOGIES, INC. (US) | 2010-03-23 | — | — | US | claimed |
| US-20080070127-A1 | PHOTOMASK HAVING SELF-MASKING LAYER AND METHODS OF ETCHING SAME | APPLIED MATERIALS, INC. (US) | 2008-03-20 | — | — | US | claimed |
| EP-1901119-A2 | Photomask having self-masking layer and methods of etching same | Applied Materials, Inc. (US) | 2008-03-19 | — | — | EP | claimed |
| WO-2007124203-A2 | METHODS AND APPARATUS FOR A SYNTHETIC ANTI-FERROMAGNET STRUCTURE WITH REDUCED TEMPERATURE DEPENDENCE | FREESCALE SEMICONDUCTOR INC. (US) | 2007-11-01 | — | — | WO | claimed |
| US-20070243639-A1 | Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature dependence | FREESCALE SEMICONDUCTOR, INC. | 2007-10-18 | — | — | US | claimed |