SCHEMBL268076

SCHEMBL268076

[Al].[As-3].[Ga+3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6939414 0.87
SCHEMBL524505 0.87
SCHEMBL2288941 0.87
SCHEMBL3858997 0.87
SCHEMBL6250778 0.87
SCHEMBL11203222 0.82
SCHEMBL19346 0.82
SCHEMBL10802613 0.82
SCHEMBL10410008 0.82
SCHEMBL2745571 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1011 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4309253-A1 BEAM SHAPING METASURFACE META PLATFORMS TECHNOLOGIES, LLC (US) 2024-01-24 EP claimed
US-20190296181-A1 ALUMINUM GALLIUM ARSENIDE AND INDIUM GALLIUM PHOSPHIDE POWER CONVERTER ON SILICON INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-09-26 US claimed
US-10389090-B2 Lateral growth of edge-emitting lasers INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2019-08-20 US claimed
US-20190157845-A1 LATERAL GROWTH OF EDGE-EMITTING LASERS INTERNATIONAL BUSINESS MACHINES CORPORATION 2019-05-23 US claimed
CN-107369721-A Broadband light perfect absorber based on aluminum-gallium arsenide structure 江西师范大学 2017-11-21 CN claimed
US-20170277017-A1 ELECTRONIC LIGHT SYNTHESIZER AND PROCESS FOR ELECTRONICALLY SYNTHESIZING LIGHT GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE 2017-09-28 US claimed
US-9364755-B1 Methods and apparatus for using illumination marks for spatial pointing NINTENDO CO., LTD. (JP) 2016-06-14 US claimed
US-9012308-B2 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto ATMEL CORPORATION (US) 2015-04-21 US claimed
CN-103812005-A Quantum well electroluminescent device WUXI CINSEC INF TECH CO LTD 2014-05-21 CN claimed
US-20140001603-A1 Integrated Circuit Structures Containing a Strain- Compensated Compound Semiconductor Layer and Methods and System Related Thereto ATMEL CORPORATION (US) 2014-01-02 US claimed
US-4779127-A Three-dimensional integrated circuit NEC CORPORATION (JP) 1988-10-18 US claimed
EP-0282781-A1 Contact to gallium-arsenide and method of forming such International Business Machines Corporation (US) 1988-09-21 EP claimed
EP-0271080-A2 Indium-phosphide hetero-MIS-gate field effect transistor NEC CORPORATION (JP) 1988-06-15 EP claimed
US-4742379-A HEMT with etch-stop FUJITSU LIMITED (JP) 1988-05-03 US claimed
US-4727403-A Double heterojunction semiconductor device with injector NEC CORPORATION (JP) 1988-02-23 US claimed
US-4675875-A Surface emitting semiconductor laser MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 1987-06-23 US claimed
EP-0208294-A1 Three-dimensional integrated circuit NEC CORPORATION (JP) 1987-01-14 EP claimed
US-4633279-A Semiconductor devices GENERAL ELECTRIC COMPANY, P.L.C., THE, 1 STANHOPE GATE, LONDON, W1A AEH, ENGLAND, A BRITISH COMPANY 1986-12-30 US claimed
US-4358676-A High speed edge illumination photodetector OPTICAL INFORMATION SYSTEMS, INC. (US) 1982-11-09 US claimed
US-4145121-A Light modulator NIPPON TELEGRAPH AND TELEPHONE PUBLIC CORPORATION (JP) 1979-03-20 US claimed