Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SCN1A | P35498 | 1/20 | 0.41 |
| ▸ | SCN2A | Q99250 | 1/20 | 0.41 |
| ▸ | SCN3A | Q9NY46 | 1/20 | 0.41 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2680946 | 0.98 | SCN1A (0.40) | SCN1ASCN2ASCN3ACYP19A1 | |
| SCHEMBL18675589 | 0.94 | SCN1A (0.43) | SCN1ASCN2ASCN3A | |
| SCHEMBL14479058 | 0.85 | SCN1A (0.38) | SCN1ASCN2ASCN3A | |
| SCHEMBL18675601 | 0.85 | CYP19A1 (0.33) | SCN1ASCN2ASCN3ACYP19A1 | |
| SCHEMBL13918190 | 0.84 | SCN1A (0.37) | SCN1ASCN2ASCN3A | |
| SCHEMBL18878486 | 0.84 | CYP19A1 (0.35) | SCN1ASCN2ASCN3ACYP19A1 | |
| SCHEMBL23817381 | 0.83 | SCN1A (0.39) | SCN1ASCN2ASCN3A | |
| SCHEMBL25454465 | 0.83 | SCN1A (0.36) | SCN1ASCN2ASCN3ACYP19A1 | |
| SCHEMBL18675592 | 0.83 | SCN1A (0.36) | SCN1ASCN2ASCN3A | |
| SCHEMBL18266770 | 0.81 | SCN1A (0.37) | SCN1ASCN2ASCN3ACYP19A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 51 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180002561-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, IMPRINT FORMING KIT, LAMINATE, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2018-01-04 | — | — | US | disclosed |
| US-20170158905-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, IMPRINT FORMING KIT, AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-08 | — | — | US | disclosed |
| US-20170146907-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, IMPRINT FORMING KIT AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-05-25 | — | — | US | disclosed |
| US-20170088743-A1 | RESIN COMPOSITION FOR UNDERLAYER FILM FORMATION, LAYERED PRODUCT, METHOD FOR FORMING PATTERN, AND PROCESS FOR PRODUCING DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-30 | — | — | US | disclosed |
| US-9519213-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-13 | — | — | US | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| US-20140255843-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-11 | — | — | US | disclosed |
| US-8795942-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-08-05 | — | — | US | disclosed |
| US-20120249995-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2012-10-04 | — | — | US | disclosed |
| US-8088537-B2 | Resist top coat composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-01-03 | — | — | US | disclosed |
| US-7341818-B2 | Norbornene-type monomers and polymers containing pendent lactone or sultone groups | PROMERUS LLC (US) | 2008-03-11 | — | — | US | disclosed |
| US-20080008961-A1 | POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-7312292-B2 | Polycyclic polymers containing pendant ion conducting moieties | PROMERUS LLC (US) | 2007-12-25 | — | — | US | disclosed |
| US-7312292-B2 | Polycyclic polymers containing pendant ion conducting moieties | PROMERUS LLC (US) | 2007-12-25 | — | — | US | disclosed |
| US-20070231741-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
| US-20070178407-A1 | Polymer, resist protective coating material, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-08-02 | — | — | US | disclosed |
| US-20070122736-A1 | RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-31 | — | — | US | disclosed |
| US-20070122741-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-31 | — | — | US | disclosed |