⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Fluoride SCHEMBL21834667 | 1.00 | — | — | |
| Fluoride SCHEMBL27729497 | 0.87 | — | — | |
| Fluoride SCHEMBL2460917 | 0.87 | — | — | |
| Fluoride SCHEMBL8671306 | 0.87 | — | — | |
| Fluoride Ion SCHEMBL779 | 0.82 | — | — | |
| Fluoride Ion SCHEMBL1943306 | 0.82 | — | — | |
| Fluoride SCHEMBL17847698 | 0.78 | — | — | |
| Fluoride SCHEMBL3038548 | 0.67 | — | — | |
| Hydrochloric Acid SCHEMBL9496122 | 0.67 | — | — | |
| Fluoride SCHEMBL10786586 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 70 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20120112249-A1 | HIGH PERFORMANCE SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME | Institute of Microelectronics, Chinese Academy of Sciences (CN) | 2012-05-10 | — | — | US | claimed |
| US-7385259-B2 | Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device | MICRON TECHNOLOGY, INC. (US) | 2008-06-10 | — | — | US | claimed |
| US-20070148930-A1 | METHOD OF MANUFACTURING A MULTILAYERED DOPED CONDUCTOR FOR A CONTACT IN AN INTEGRATED CIRCUIT DEVICE | MOULI CHANDRA V | 2007-06-28 | — | — | US | claimed |
| US-20070114615-A1 | METHOD OF MANUFACTURING A MULTILAYERED DOPED CONDUCTOR FOR A CONTACT IN AN INTEGRATED CIRCUIT DEVICE | MICRON TECHNOLOGY, INC. | 2007-05-24 | — | — | US | claimed |
| US-7195995-B2 | Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device | MICRON TECHNOLOGY, INC. (US) | 2007-03-27 | — | — | US | claimed |
| US-20060046354-A1 | Recessed gate dielectric antifuse | MICRON SEMICONDUCTOR PRODUCTS, INC. | 2006-03-02 | — | — | US | claimed |
| US-20050064689-A1 | Method of manufacturing a multilayered doped conductor for a contact in an integrated circuit device | MICRON TECHNOLOGY, INC. | 2005-03-24 | — | — | US | claimed |
| US-20040042283-A1 | Multilayered doped conductor | MICRON TECHNOLOGY, INC. | 2004-03-04 | — | — | US | claimed |
| US-6670682-B1 | Multilayered doped conductor | MICRON TECHNOLOGY, INC. | 2003-12-30 | — | — | US | claimed |
| JP-3265131-A | — | — | None | — | — | JP | disclosed |
| JP-8139191-A | — | — | None | — | — | JP | disclosed |
| US-20240371936-A1 | SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS | ASAHI KASEI MICRODEVICES CORPORATION (JP) | 2024-11-07 | — | — | US | disclosed |
| US-11810982-B2 | Nonvolatile memory device with a doped region between a source and a drain and integration schemes | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2023-11-07 | — | — | US | disclosed |
| US-20230029507-A1 | NONVOLATILE MEMORY DEVICE WITH A DOPED REGION BETWEEN A SOURCE AND A DRAIN AND INTEGRATION SCHEMES | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2023-02-02 | — | — | US | disclosed |
| JP-H08139191-A | SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF | SEIKO EPSON CORP | 1996-05-31 | — | — | JP | disclosed |
| EP-0459398-B1 | Manufacturing method of a channel in MOS semiconductor devices | TOSHIBA KK (JP) | 1994-12-07 | — | — | EP | disclosed |
| US-5153146-A | MAUFACTURING METHOD OF SEMICONDUCTOR DEVICES | KABUSHIKI KAISHA TOSHIBA (JP) | 1992-10-06 | — | — | US | disclosed |
| EP-0459398-A2 | Manufacturing method of a channel in MOS semiconductor devices | KABUSHIKI KAISHA TOSHIBA (JP) | 1991-12-04 | — | — | EP | disclosed |
| JP-H03265131-A | MANUFACTURE OF SEMICONDUCTOR DEVICE | FUJITSU LTD | 1991-11-26 | — | — | JP | disclosed |
| US-4818719-A | FORMING ELECTRODE WIRING LAYERS WITH SUBSTRATES OF DIFFERENT CONDUCTION | FUJI XEROX CO., LTD. (JP) | 1989-04-04 | — | — | US | disclosed |