⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL5031153 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL28217308 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL5057144 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL28111280 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL20138289 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL511076 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL15092776 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL29196727 | 0.87 | — | — | |
| Ammonia Solution, Strong SCHEMBL184871 | 0.82 | — | — | |
| Ammonia Solution, Strong SCHEMBL10637653 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1256 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12046666-B2 | Gallium nitride (GaN) based transistor with multiple p-GaN blocks | TEXAS INSTRUMENTS INCORPORATED (US) | 2024-07-23 | — | — | US | claimed |
| CN-118173591-A | High electron mobility transistor and method of manufacturing the same | 台亚半导体股份有限公司 | 2024-06-11 | — | — | CN | claimed |
| US-12007716-B2 | Flexible timepiece component and horological movement including such a component | THE SWATCH GROUP RESEARCH AND DEVELOPMENT LTD (CH) | 2024-06-11 | — | — | US | claimed |
| CN-114843267-B | Enhanced N-channel and P-channel GaN device integrated structure | 东南大学 | 2024-04-19 | — | — | CN | claimed |
| CN-117577680-B | Gallium nitride bidirectional power device | 深圳市威兆半导体股份有限公司 | 2024-04-12 | — | — | CN | claimed |
| CN-117613071-B | Enhancement mode gallium nitride high electron mobility transistor device | 英诺赛科（珠海）科技有限公司 | 2024-03-29 | — | — | CN | claimed |
| CN-117637894-A | Ultra-thin barrier enhanced heterojunction ultraviolet photoelectric detector and preparation method thereof | 华南理工大学 | 2024-03-01 | — | — | CN | claimed |
| CN-117613071-A | Enhancement mode gallium nitride high electron mobility transistor device | 英诺赛科（珠海）科技有限公司 | 2024-02-27 | — | — | CN | claimed |
| EP-3839643-B1 | FLEXIBLE TIMEPIECE COMPONENT AND CLOCKWORK COMPRISING SUCH A COMPONENT | SWATCH GROUP RES & DEV LTD (CH) | 2024-02-21 | — | — | EP | claimed |
| CN-117577680-A | Gallium nitride bidirectional power device | 深圳市威兆半导体股份有限公司 | 2024-02-20 | — | — | CN | claimed |
| CN-1825539-A | Method for growing non-crack III family nitride on silicon substrate | INST OF SEMICONDUCTORS CAS (CN) | 2006-08-30 | — | — | CN | claimed |
| US-20060118822-A1 | Semiconductor device | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2006-06-08 | — | — | US | claimed |
| CN-1253947-C | Semiconductor light-emitting device double-heterogeneity structure and light-emitting diode | JIANGXI FANGDA FUVE INFORMATIO (CN) | 2006-04-26 | — | — | CN | claimed |
| CN-1705082-A | Structure and making method of gallium nitride high electron mobility transistor | INST OF SEMICONDUCTORS CAS (CN) | 2005-12-07 | — | — | CN | claimed |
| CN-1206744-C | Vertical structure lnGaN light emitting diode | GREE RES INST (US) | 2005-06-15 | — | — | CN | claimed |
| CN-1156028-C | Double heterojunction light emitting diode with gallium nitride active layer | ���﹫˾ | 2004-06-30 | — | — | CN | claimed |
| CN-1413362-A | Vertical geometry InGaN light-emitting diode | GREE RES INC (US) | 2003-04-23 | — | — | CN | claimed |
| CN-1395320-A | Semiconductor light-emitting device double-heterogeneity structure and light-emitting diode | JIANGXI FANGDA FUVE INFORMATIO (CN) | 2003-02-05 | — | — | CN | claimed |
| CN-1309816-A | Nitride based transistors on semi-insulating silicon carbide substrates | CREE INC (US) | 2001-08-22 | — | — | CN | claimed |
| CN-1190491-A | Double heterojunction light emitting diode with gallium nitride active layer | CREE RESEARCH INC (US) | 1998-08-12 | — | — | CN | claimed |