SCHEMBL2757778

SCHEMBL2757778

CCCCOC(C)O[C@@H]1[C@H]2OC(C)(C)O[C@H]2O[C@@H]1C1COC(C)(C)O1

nearest known ligand 0.51

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 1/20 0.51
▸ CA2 P00918 1/20 0.51
▸ CA9 Q16790 1/20 0.51
▸ LMNA P02545 1/20 0.34
▸ CYP1A2 P05177 1/20 0.34
▸ THPO P40225 1/20 0.34
▸ KMT2A Q03164 3/20 0.32
▸ ALDH1A1 P00352 1/20 0.32
▸ MEN1 O00255 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2757736 0.89 CA1 (0.55) CA1CA2CA9
SCHEMBL2757745 0.88 CA1 (0.52) CA1CA2CA9LMNACYP1A2
SCHEMBL2757737 0.85 CA1 (0.54) CA1CA2CA9
SCHEMBL2757746 0.85 CA1 (0.49) CA1CA2CA9
SCHEMBL2757735 0.85 CA1 (0.49) CA1CA2CA9
SCHEMBL15326594 0.83 CA1 (0.57) CA1CA2CA9LMNACYP1A2
SCHEMBL14853701 0.83 CA1 (0.57) CA1CA2CA9LMNACYP1A2
SCHEMBL13222912 0.83 CA1 (0.57) CA1CA2CA9LMNACYP1A2
SCHEMBL16661388 0.83 CA1 (0.57) CA1CA2CA9LMNACYP1A2
SCHEMBL15588618 0.83 CA1 (0.57) CA1CA2CA9LMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-8541161-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the same and pattern forming method FUJIFILM CORPORATION (JP) 2013-09-24 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20120003586-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed
US-20110269071-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
US-20110269071-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-11-03 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7255971-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-08-14 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
US-7214465-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2007-05-08 — — US disclosed
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