Fluoromethane

Fluoromethane

SCHEMBL27627482

C=CC(=O)OC(C)C.CF

nearest known ligand 0.48

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Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
HCAR2 Q8TDS4 1/20 0.48
TSHR P16473 9/20 0.46
CA12 O43570 4/20 0.37
CA1 P00915 4/20 0.37
CA2 P00918 4/20 0.37
CA7 P43166 4/20 0.37
CA9 Q16790 4/20 0.37
CA14 Q9ULX7 4/20 0.37
AKR1B10 O60218 1/20 0.37
AKR1B1 P15121 1/20 0.37
HPGD P15428 1/20 0.35
ALDH1A1 P00352 5/20 0.35
TP53 P04637 3/20 0.34
HIF1A Q16665 3/20 0.34
CYP3A4 P08684 2/20 0.34
HSD17B10 Q99714 1/20 0.34
MAPK1 P28482 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
LMNA P02545 3/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25921 0.95
SCHEMBL31332333 0.95 HCAR2 (0.52) HCAR2TSHRCA12CA1CA2
Ammonia Solution, Strong SCHEMBL1881209 0.92
Hydrochloric Acid SCHEMBL7719769 0.92
Water SCHEMBL27638642 0.92
Ethylene SCHEMBL5972217 0.92 HCAR2 (0.50) HCAR2TSHRCA12CA1CA2
SCHEMBL31631400 0.92
SCHEMBL31631401 0.92
Potassium SCHEMBL31631402 0.92
Dimethylamine SCHEMBL10504342 0.88 HCAR2 (0.46) HCAR2TSHRCA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-103154042-B Photoetching technique multipolymer and manufacture method thereof, anti-corrosion agent composition, forms the manufacture method of the substrate of pattern, the evaluation method of multipolymer, multipolymer composition analytic method MITSUBISHI RAYON CO.,LTD. (JP) 2015-12-16 CN disclosed
CN-103154042-A Copolymers for lithography and method for producing same, resist composition, method for producing substrate with pattern formed thereupon, method for evaluating copolymers, and method for analyzing copolymer compositions MITSUBISHI RAYON CO 2013-06-12 CN disclosed
CN-102753476-A Carbon nanotube sheet and process for production thereof UNIV HOKKAIDO NAT UNIV CORP 2012-10-24 CN disclosed
CN-102712561-A Bicyclohexane derivative compound and process for producing the same MITSUBISHI GAS CHEMICAL CO 2012-10-03 CN disclosed
CN-101823989-B Polymer for resist, resist composition, pattern forming method and material compound for resist polymer MITSUBISHI RAYON CO 2012-05-09 CN disclosed
CN-102341366-A Adamantane derivative, method for producing same, polymer using same as starting material, and resin composition MITSUBISHI GAS CHEMICAL CO 2012-02-01 CN disclosed
CN-1930194-B Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO 2011-03-30 CN disclosed
CN-101823989-A Resist with polymkeric substance, resist composition and method of manufacturing pattern and resist with the polymkeric substance starting compound MITSUBISHI RAYON CO 2010-09-08 CN disclosed
CN-1976962-B Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO 2010-06-23 CN disclosed
CN-100406481-C Resist polymer and resist composition MITSUBISHI RAYON CO (JP) 2008-07-30 CN disclosed
CN-1976962-A Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon MITSUBISHI RAYON CO (JP) 2007-06-06 CN disclosed
CN-1930194-A Resist polymer, resist composition, method for producing pattern, and raw material compound for resist polymer MITSUBISHI RAYON CO (JP) 2007-03-14 CN disclosed
CN-1745114-A Resist polymer and resist composition MITSUBISHI RAYON CO (JP) 2006-03-08 CN disclosed