SCHEMBL27645286

SCHEMBL27645286

FCC1(F)C(F)(F)C(F)(F)C1(F)F

nearest known ligand 0.33

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15274253 1.00 MEN1 (0.33) MEN1KMT2ATDP1
SCHEMBL15274252 1.00 MEN1 (0.33) MEN1KMT2ATDP1
SCHEMBL16768586 0.92 MEN1 (0.33) MEN1KMT2ATDP1
SCHEMBL13913354 0.69 MEN1 (0.32) MEN1KMT2ATDP1
SCHEMBL16478900 0.67
SCHEMBL13913356 0.66
SCHEMBL693244 0.65
Perfluorocyclobutane SCHEMBL24521 0.65 MEN1 (0.62) MEN1KMT2ATDP1
SCHEMBL554655 0.65 MEN1 (0.62) MEN1KMT2ATDP1
SCHEMBL7260823 0.65 MEN1 (0.62) MEN1KMT2ATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101556948-B Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd TOKYO ELECTRON LTD 2012-09-19 CN disclosed
CN-1868044-B Semiconductor device, method for manufacturing semiconductor device, and gas for plasma CVD TOKYO ELECTRON LTD 2012-04-18 CN disclosed
CN-101556948-A Semiconductor device, method for manufacturing semiconductor device and gas for plasma cvd TOKYO ELECTRON LTD (JP) 2009-10-14 CN disclosed
CN-1930415-A Apparatus for producing gas, vessel for supplying gas and gas for use in manufacturing electronic device OHMI TADAHIRO (JP) 2007-03-14 CN disclosed
CN-1868044-A Semiconductor device, method for manufacturing semiconductor device, and gas for plasma CVD TOKYO ELECTRON LTD (JP) 2006-11-22 CN disclosed