⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Carbon Monoxide SCHEMBL1426617 | 0.94 | — | — | |
| SCHEMBL9751064 | 0.85 | — | — | |
| SCHEMBL9750831 | 0.79 | — | — | |
| SCHEMBL6305825 | 0.76 | — | — | |
| SCHEMBL26597790 | 0.76 | — | — | |
| SCHEMBL1626394 | 0.76 | — | — | |
| SCHEMBL28773321 | 0.74 | — | — | |
| SCHEMBL6053702 | 0.74 | — | — | |
| SCHEMBL5362721 | 0.74 | — | — | |
| SCHEMBL1485894 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-106065466-B | Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer | 三星电子株式会社 | 2020-03-06 | — | — | CN | claimed |
| CN-106065466-A | Compositions and the method for formation stratiform transient metal chalcogenide compound layer for stratiform transient metal chalcogenide compound layer | 三星电子株式会社 | 2016-11-02 | — | — | CN | claimed |
| CN-118414450-A | Atomic layer deposition pulse sequence engineering for improved conformality to low temperature precursors | 朗姆研究公司 | 2024-07-30 | — | — | CN | disclosed |
| CN-106065466-B | Composition for layered transition metal chalcogenide compound layer and method of forming layered transition metal chalcogenide compound layer | 三星电子株式会社 | 2020-03-06 | — | — | CN | disclosed |
| CN-106065466-A | Compositions and the method for formation stratiform transient metal chalcogenide compound layer for stratiform transient metal chalcogenide compound layer | 三星电子株式会社 | 2016-11-02 | — | — | CN | disclosed |