SCHEMBL2808705

SCHEMBL2808705

CCCCCOC(C)(C)O

nearest known ligand 0.42

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
CES1 P23141 1/20 0.42
CA12 O43570 3/20 0.39
CA1 P00915 3/20 0.39
CA2 P00918 3/20 0.39
CA9 Q16790 3/20 0.39
THRB P10828 2/20 0.39
MEN1 O00255 1/20 0.39
HTT P42858 1/20 0.39
KMT2A Q03164 1/20 0.39
MAPT P10636 1/20 0.39
LPAR3 Q9UBY5 6/20 0.38
LPAR2 Q9HBW0 5/20 0.38
LPAR1 Q92633 2/20 0.38
NAAA Q02083 1/20 0.38
CES2 O00748 2/20 0.38
GBA1 P04062 1/20 0.37
EPHX1 P07099 1/20 0.35
TSHR P16473 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1899591 0.97 CES1 (0.45) CES1CA12CA1CA2CA9
SCHEMBL15308094 0.97 CES1 (0.45) CES1CA12CA1CA2CA9
SCHEMBL13456958 0.97 CES1 (0.45) CES1CA12CA1CA2CA9
Ammonia Solution, Strong SCHEMBL6230421 0.95 CES1 (0.44) CES1CA12CA1CA2CA9
SCHEMBL434225 0.92
SCHEMBL27937727 0.83 TSHR (0.50) CES1THRBMEN1HTTKMT2A
SCHEMBL20145201 0.82 CES1 (0.45) CES1CA12CA1CA2CA9
SCHEMBL8769729 0.82 CES1 (0.45) CES1CA12CA1CA2CA9
SCHEMBL1262868 0.80
SCHEMBL16465846 0.80 CES1 (0.39) CES1CA12CA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-3938591-A Intermediate fluid systems for long distance oil displacement MARATHON OIL COMPANY (US) 1976-02-17 US claimed
US-8895222-B2 Actinic ray-sensitive or radiation-sensitive resin composition and resist film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2014-11-25 US disclosed
US-20100248149-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-30 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6861209-B2 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-03-01 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-20040106070-A1 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-06-03 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5880169-A HAVING HIGH RESOLUTION FOR FINE PATTERNING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-09 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed
US-5824824-A AROMATIC SULFONATE ANIONS AND DISSOLUTION CONTRAST IN EXPOSED AND NONEXPOSED AREAS, POSITIVE RESISTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-10-20 US disclosed