⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28031473 | 0.87 | — | — | |
| SCHEMBL20578355 | 0.87 | — | — | |
| SCHEMBL20838460 | 0.87 | — | — | |
| SCHEMBL28517898 | 0.87 | — | — | |
| SCHEMBL28080142 | 0.87 | — | — | |
| SCHEMBL316480 | 0.82 | — | — | |
| SCHEMBL28030930 | 0.78 | — | — | |
| SCHEMBL27822236 | 0.78 | — | — | |
| SCHEMBL29105415 | 0.78 | — | — | |
| SCHEMBL27977603 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-116314287-A | Self-aligned two-dimensional semiconductor lightly doped drain preparation method and two-dimensional semiconductor transistor | 北京大学 | 2023-06-23 | — | — | CN | claimed |
| CN-116246958-A | Self-aligned patterning method of two-dimensional semiconductor transistor and two-dimensional semiconductor transistor | 北京大学 | 2023-06-09 | — | — | CN | claimed |
| CN-115911105-A | Solid-state source doping method based on two-dimensional semiconductor and two-dimensional semiconductor transistor | 北京大学 | 2023-04-04 | — | — | CN | claimed |
| CN-103688199-B | Spectral selection panel | 特罗皮格拉斯科技有限公司 | 2016-12-14 | — | — | CN | claimed |
| US-20250113599-A1 | METHODS FOR DOPING 2D TRANSISTOR DEVICES AND RESULTING ARCHITECTURES | INTEL CORPORATION (US) | 2025-04-03 | — | — | US | disclosed |
| CN-116246958-A | Self-aligned patterning method of two-dimensional semiconductor transistor and two-dimensional semiconductor transistor | 北京大学 | 2023-06-09 | — | — | CN | disclosed |
| CN-115696911-A | Semiconductor memory device with a plurality of memory cells | 三星电子株式会社 | 2023-02-03 | — | — | CN | disclosed |
| CN-112047308-B | In 2 Se 3 Quantum dot and preparation method thereof | 南京理工大学 | 2022-11-04 | — | — | CN | disclosed |
| CN-112897478-B | Indium diselenide nanobelt, and preparation method and application thereof | 广东工业大学 | 2022-02-22 | — | — | CN | disclosed |
| CN-112897478-B | Indium diselenide nanobelt, and preparation method and application thereof | 广东工业大学 | 2022-02-22 | — | — | CN | disclosed |
| CN-112897478-A | Indium diselenide nanobelt, and preparation method and application thereof | 广东工业大学 | 2021-06-04 | — | — | CN | disclosed |
| CN-112897478-A | Indium diselenide nanobelt, and preparation method and application thereof | 广东工业大学 | 2021-06-04 | — | — | CN | disclosed |
| CN-112047308-A | In2Se3Quantum dot and preparation method thereof | 南京理工大学 | 2020-12-08 | — | — | CN | disclosed |