SCHEMBL28258802

SCHEMBL28258802

[Mo].[SeH2].[W]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28503482 1.00
SCHEMBL60759 0.82
SCHEMBL28561338 0.82
SCHEMBL1276586 0.82
SCHEMBL1288146 0.82
SCHEMBL25250195 0.82
SCHEMBL2716796 0.82
SCHEMBL15465901 0.82
SCHEMBL3246688 0.67
Water SCHEMBL21523877 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109023296-B Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition 华东师范大学 2020-08-25 CN claimed
CN-109023296-A A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate 华东师范大学 2018-12-18 CN claimed
CN-116295898-A Transition metal chalcogenide temperature-sensitive layer and temperature sensor 西北工业大学 2023-06-23 CN disclosed
CN-110739604-B Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method 厦门乾照半导体科技有限公司 2021-03-09 CN disclosed
CN-109023296-B Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition 华东师范大学 2020-08-25 CN disclosed
CN-109023296-B Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition 华东师范大学 2020-08-25 CN disclosed
CN-109023296-B Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition 华东师范大学 2020-08-25 CN disclosed
CN-110739604-A Semiconductor epitaxial structure based on flexible substrate, VCSEL and manufacturing method 厦门乾照半导体科技有限公司 2020-01-31 CN disclosed
CN-109023296-A A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate 华东师范大学 2018-12-18 CN disclosed
CN-109023296-A A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate 华东师范大学 2018-12-18 CN disclosed
CN-109023296-A A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate 华东师范大学 2018-12-18 CN disclosed