SCHEMBL283093

SCHEMBL283093

CCC1(C)[CH]C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL910558 0.73
SCHEMBL17260477 0.69
SCHEMBL2831467 0.66
SCHEMBL31281425 0.66
SCHEMBL31282080 0.63
SCHEMBL911168 0.62
SCHEMBL31544838 0.61
SCHEMBL16051986 0.57
SCHEMBL9098607 0.56
SCHEMBL6315960 0.55

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1034 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116528674-A [ (1, 5-bis (heteroaryl) -1H-1,2, 4-triazol-3-yl) oxy ] acetic acid derivatives as safeners for protecting useful plants and crop plants 拜耳公司 2023-08-01 CN claimed
US-10295907-B2 Resist underlayer film-forming composition for lithography containing polymer having acrylamide structure and acrylic acid ester structure NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2019-05-21 US claimed
US-12044968-B2 Protective film-forming composition having acetal structure and amide structure NISSAN CHEMICAL CORPORATION (JP) 2024-07-23 US disclosed
EP-4401115-A1 METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING PROCESSED SEMICONDUCTOR SUBSTRATE, AND COMPOSITION FOR EXFOLIATION AND DISSOLUTION Nissan Chemical Corporation (JP) 2024-07-17 EP disclosed
CN-118355328-A Composition for forming resist underlayer film comprising polymer containing polycyclic aromatic group 日产化学株式会社 2024-07-16 CN disclosed
CN-118339515-A Composition for forming resist underlayer film having hydroxycinnamic acid derivative 日产化学株式会社 2024-07-12 CN disclosed
CN-118339251-A Release agent, adhesive composition, laminate, and method for producing semiconductor substrate 日产化学株式会社 2024-07-12 CN disclosed
US-20240231230-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM NISSAN CHEMICAL CORPORATION (JP) 2024-07-11 US disclosed
EP-4398285-A1 ADHESIVE COMPOSITION, MULTILAYER BODY, AND METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE Nissan Chemical Corporation (JP) 2024-07-10 EP disclosed
EP-4397623-A1 EPOXY GROUP-CONTAINING ORGANOSILICA SOL, EPOXY RESIN COMPOSITION AND PRODUCTION METHOD THEREOF Nissan Chemical Corporation (JP) 2024-07-10 EP disclosed
CN-118318208-A Composition for forming catechol-containing drug solution resistant protective film 日产化学株式会社 2024-07-09 CN disclosed
EP-2085823-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING QUADRUPLE-LAYER LAMINATE Nissan Chemical Industries, Ltd. (JP) 2009-08-05 EP disclosed
CN-101429200-A Tricyclic benzopyran compound as anti-arrhythmic agents NISSAN CHEMICAL IND LTD (JP) 2009-05-13 CN disclosed
CN-101267803-A Wrinkle-improving agent SHISEIDO CO LTD (JP) 2008-09-17 CN disclosed
EP-1941861-A1 WRINKLE-IMPROVING AGENT Shiseido Company, Limited (JP) 2008-07-09 EP disclosed
CN-101175470-A Parakeratosis inhibitor, pore-shrinking agent and external composition for skin SHISEIDO CO LTD (JP) 2008-05-07 CN disclosed
EP-1880711-A1 PARAKERATOSIS INHIBITOR, PORE-SHRINKING AGENT AND EXTERNAL COMPOSITION FOR SKIN Shiseido Company, Limited (JP) 2008-01-23 EP disclosed
CN-101076519-A Amide compound and thrombopoietin receptor activator NISSAN CHEMICAL IND LTD (JP) 2007-11-21 CN disclosed
CN-101067068-A Light resistant primer composition, light emitting semiconductor device and method of producing the same SHINETSU CHEMICAL CO (JP) 2007-11-07 CN disclosed
CN-1934116-A Tricyclic benzopyran compounds useful as antiarrhythmic agents NISSAN CHEMICAL IND LTD (JP) 2007-03-21 CN disclosed