⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9251322 | 0.89 | — | — | |
| SCHEMBL674963 | 0.89 | — | — | |
| SCHEMBL7149402 | 0.80 | — | — | |
| SCHEMBL18395329 | 0.80 | — | — | |
| SCHEMBL28793799 | 0.80 | — | — | |
| SCHEMBL23927967 | 0.80 | — | — | |
| SCHEMBL19739386 | 0.80 | — | — | |
| SCHEMBL22372626 | 0.80 | — | — | |
| SCHEMBL22551321 | 0.80 | — | — | |
| Methane SCHEMBL27958384 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-111769162-B | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2024-05-07 | — | — | CN | claimed |
| CN-111769162-A | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2020-10-13 | — | — | CN | claimed |
| CN-111769162-B | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2024-05-07 | — | — | CN | disclosed |
| CN-111769162-B | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2024-05-07 | — | — | CN | disclosed |
| CN-111769162-A | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2020-10-13 | — | — | CN | disclosed |
| CN-111769162-A | Amorphous oxide thin film transistor with top gate structure and preparation method thereof | 贵州民族大学 | 2020-10-13 | — | — | CN | disclosed |