SCHEMBL284725

SCHEMBL284725

Br[Ta]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2572573 0.58
SCHEMBL18614843 0.41
SCHEMBL1519 0.41
SCHEMBL689 0.41
SCHEMBL384676 0.33
SCHEMBL384677 0.33
SCHEMBL1458384 0.33
SCHEMBL1130909 0.33
Potassium Ion SCHEMBL23462189 0.00 CA4 (0.50)
Water O 15 SCHEMBL25428717 0.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 712 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260110958-A1 MASKS, METHODS OF MANUFACTURING MASKS, AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-23 US claimed
US-20260031346-A1 CATHODE MATERIAL CONTAINING HALOGEN-OXYGEN COMPOUND, METHOD FOR PREPARING SAME, AND CATHODE PLATE Eastern Institute for Advanced Study (CN) 2026-01-29 US claimed
US-12497692-B2 Halogen resistant coatings and methods of making and using thereof APPLIED MATERIALS, INC. (US) 2025-12-16 US claimed
US-20250294791-A1 SEMICONDUCTOR STRUCTURE TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-09-18 US claimed
WO-2025151418-A1 DIETHYL ZINC AND METAL HALIDE PRECURSORS FOR DEPOSITION OF METAL FILMS ON SEMICONDUCTOR SUBSTRATES APPLIED MATERIALS, INC. (US) 2025-07-17 WO claimed
US-20250230544-A1 DIETHYL ZINC AND METAL HALIDE PRECURSORS FOR DEPOSITION OF METAL FILMS ON SEMICONDUCTOR SUBSTRATES APPLIED MATERIALS, INC. (US) 2025-07-17 US claimed
US-12356646-B2 Semiconductor device and method for manufacturing the same TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) 2025-07-08 US claimed
CN-118880278-B Composite material, preparation method and application thereof 湖南德智新材料股份有限公司 2024-12-13 CN claimed
CN-118703979-B Composite material, preparation method and application thereof 湖南德智新材料股份有限公司 2024-12-10 CN claimed
CN-118954616-A Positive electrode material containing amorphous halogen-oxygen compound and preparation method and application thereof 宁波市东方理工高等研究院 2024-11-15 CN claimed
US-6328947-B1 HYDROLYZING METAL HALIDE IN THE PRESENCE OF ORGANIC SOLVENT TO OBTAIN FINE PARTICLES OF METAL OXIDE SHOWA DENKO K.K. (JP) 2001-12-11 US claimed
WO-2000065125-A1 PECVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS TOKYO ELECTRON LIMITED (JP) 2000-11-02 WO claimed
WO-2000065124-A1 PLASMA TREATMENT OF THERMAL CVD TAN FILMS FROM TANTALUM HALIDE PRECURSORS TOKYO ELECTRON LIMITED (JP) 2000-11-02 WO claimed
WO-2000065122-A1 CVD OF INTEGRATED Ta AND TaNx FILMS FROM TANTALUM HALIDE PRECURSORS TOKYO ELECTRON LIMITED (JP) 2000-11-02 WO claimed
WO-2000065123-A1 THERMAL CVD OF TaN FILMS FROM TANTALUM HALIDE PRECURSORS TOKYO ELECTRON LIMITED (JP) 2000-11-02 WO claimed
WO-2000065126-A1 CVD TANTALUM NITRIDE PLUG FORMATION FROM TANTALUM HALIDE PRECURSORS TOKYO ELECTRON LIMITED (JP) 2000-11-02 WO claimed
US-5491028-A Enhanced adherence of diamond coatings TRUSTEES OF BOSTON UNIVERSITY (US) 1996-02-13 US claimed
US-5433977-A Enhanced adherence of diamond coatings by combustion flame CVD TRUSTEES OF BOSTON UNIVERSITY (US) 1995-07-18 US claimed
US-5324616-A Encapsulated toner compositions and processes thereof XEROX CORPORATION (US) 1994-06-28 US claimed
US-4784160-A Implantable device having plasma sprayed ceramic porous surface CORDIS CORPORATION (US) 1988-11-15 US claimed